EU PVSEC Programme Online
EU PVSEC 2021, 6 - 10 September 2021
Session: 2DV.3 Technologies for High Temperature Passivating Contacts and Homo Junction Silicon Solar Cells / Low Temperature Routes for Silico
Type: Visual
Date: Thursday, 9th September 2021
13:30 - 15:00
Event: Conference Conference
Topic: 2. Silicon Materials and Cells
Presentations:
2DV.3.1 A Highly Passivating and Electron-Selective SiOx/SiCx Contact for Si Solar Cells Made with Fully Industrial Techniques
R. Sharma, imec, Leuven, Belgium
2DV.3.2 Firing-Stable PECVD SiOxNy/n-Poly-Si Passivating Contacts for High-Efficiency Silicon Solar Cells
M. Stöhr, ISFH, Emmerthal, Germany
2DV.3.3 22.8% Si-Solar Cells Using Sputtered polySi(n) Passivating Contacts and Direct Screen-Printing Metallization
J.J. Diaz Leon, CSEM, Neuchâtel, Switzerland
2DV.3.4 Large-Area Bifacial n-TOPCon Solar Cells with In Situ Phosphorus-Doped LPCVD-Based Poly-Si Passivating Contacts
M. Firat, imec, Leuven, Belgium
2DV.3.5 Novel Metallisation Strategies of Front-Side Poly-Si(n) Passivating Contact Enabling 22.8% c-Si Solar Cells
F.-J. Haug, EPFL, Neuchâtel, Switzerland
2DV.3.6 Localisation of Front Side Passivating Contacts for Direct Metallisation of High-Efficiency c-Si Solar Cells
F.-J. Haug, EPFL, Neuchâtel, Switzerland
2DV.3.7 Evaluation and Demonstration of Bifacial-IBC Solar Cells Featuring Poly-Si Alloy Passivating Contacts
G. Yang, Delft University of Technology, Delft, Netherlands
2DV.3.8 P-Type TOPCon by Aluminium-Induced Crystallization of Amorphous Silicon
R. Sharma, imec, Leuven, Belgium
2DV.3.9 Interplay of IBC Cell's Front Surface Doping, Passivation Quality, and Stability under Ultraviolet Light Exposure
H. Chu, ISC Konstanz, Constance, Germany
2DV.3.10 Novel Ag-Paste for Simultaneous Contacting of n+ and p+ Emitters through Contact-Supportive Well-Passivating Doped APCVD Layers for PERT and IBC Solar Cells
F. Geml, University of Konstanz, Konstanz, Germany
2DV.3.11 Passivation of Ultrathin Polysilicon via a Simple One-Step Deposition Method for Large-Area Crystalline Silicon Solar Cells
F.S. Minaye Hashemi, TNO Energy Transition, Petten, Netherlands
2DV.3.12 Novel Approach for Self-Aligned Local Polysilicon Layer Formation
Y. Cai, UNSW Australia, Sydney, Australia
2DV.3.13 Effects of Laser Scribing Adjacent to Electrically Conductive Adhesive Interconnects
D. Rudolph, ISC Konstanz, Constance, Germany
2DV.3.14 Evaluation of Bifacial Interdigitated-Back-Contact (IBC) Crystalline Silicon Solar Cells
T. Tachibana, AIST, Koriyama, Japan
2DV.3.26 Electrodeposition of Copper on Screen Printed Copper Seed-Grid for Metallization of Silicon Heterojunction Cells
A. Lachowicz, CSEM, Neuchâtel, Switzerland
2DV.3.27 Stable Copper Plated Metallization on SHJ Solar Cells & Investigation of Selective Al/AlOx Laser Patterning
T. Hatt, Fraunhofer ISE, Freiburg, Germany
2DV.3.28 IWO Films for Silicon Heterojunction Solar Cells: Effects of the Sputtering Conditions on Optoelectronic Properties and Carrier Lifetime
F. Menchini, ENEA, Rome, Italy
2DV.3.29 Integration of a New TCO Material for a-Si:H/c-Si Heterojunction Solar Cells and Effect on the TCO/Metal Contact Resistance
S. Zogbo, CEA, Grenoble, France
2DV.3.30 Experimental Modeling of PECVD Process Variations and Their Influence on HJT Solar Cell Light Soaking Behavior
K.V. Emtsev, R&D Center TFTE, St-Petersburg, Russian Federation
2DV.3.31 Si Heterojunction Solar Cells with Dopant-Free Carrier-Selective Contacts
P. Delli Veneri, ENEA, Portici, Italy
2DV.3.32 Edge Passivation of Heterojunction Solar Cells for Research Purposes
C. Summonte, CNR, Bologna, Italy