| Presentations: |
| 3BV.2.1 Two Local Built-in Potentials of CZTSe Ge Bi-Layers Devices by Modulus Spectroscopy
S. Lee, Indiana State University, Terre Haute, USA |
| 3BV.2.2 DLTS Investigations on CIGS Solar Cells from an Inline Co-Evaporation System with RbF Post-Deposition Treatment
T. Helder, ZSW, Stuttgart, Germany |
| 3BV.2.3 Ge Incorporated Cu2(Cd,Zn)Sn(S,Se)4 Thin Films for Solar Cells: Combined DFT and Experimental Study
S. Zhuk, BSUIR, Minsk, Belarus |
| 3BV.2.4 Design of Experiment Investigation of Processing Factors Involved in Two-Step Fabrication of CI(G)S Absorber Layers
S. Hamtaei, imec, Diepenbeek, Belgium |
| 3BV.2.5 Analysis of Environmentally Friendly and Low Cost Non Vacuum Process for Cu2ZnSn(S,Se)4 Solar Cells
P. Punathil, University of Verona, Verona, Italy |
| 3BV.2.6 Alteration of PV Cell Parameters via n-Doped Graphene Quantum Dots Incorporation on Solution-Processed CIGS Thin Film-Based Photovoltaic Cells
F. Khan, KFUPM, Dhahran, Saudi Arabia |
| 3BV.2.8 Impact of Silver Alloying on the Device Performance and Stability in Low Temperature Grown (Ag,Cu)(In,Ga)Se2 Solar Cells
S.-C. Yang, Empa, Dübendorf, Switzerland |
| 3BV.2.9 Bi-Layered Structure of CuInSe2+CuInS2: A New Route towards Forming Sulfur Grading into CuInSe2 Thin-Film Solar Absorbers
F. Khavari, Uppsala University, Uppsala, Sweden |
| 3BV.2.10 Multi-Dimensional Simulation of Chalcogenide Thin-Film Solar Cells – Towards Digital Twins and Conceptual Studies
M. Maiberg, Martin Luther University, Halle (Saale), Germany |
| 3BV.2.12 Potassium-Containing Back Electrode Engineering for High Performance CIGS Solar Cells
M. Simor, TNO/Solliance, Eindhoven, Netherlands |
| 3BV.2.13 CdS Thickness Reduction in CIGS Solar Cells by Application of ALD-ZnxMg(1-X)O Layer
D. Bagrowski, ZSW, Stuttgart, Germany |
| 3BV.2.14 Solution-Processed Growth of High-Quality CISSe Solar Cells on ITO Back Contact
Y. Gao, University of Duisburg-Essen, Duisburg, Germany |
| 3BV.2.15 Combined In-Vacuo Spectral and Time-Resolved Photoluminescence Measurements for Comprehensive (Ag,Cu)(In,Ga)Se2 Absorber Layer Characterization
C. Camus, LayTec, Berlin, Germany |
| 3BV.2.16 A Study of Ag Paste Contacts on Various TCO Layers for Cu(In,Ga)Se2 Thin Film Modules
B. Sesli, UHasselt, Diepenbeek, Belgium |
| 3BV.2.26 PV Cell for Varied Angle Performance Under Indoor Lighting Simulator
Y.-S. Long, ITRI, Hsinchu, Taiwan |
| 3BV.2.38 Growth and Structural Characterization of GaSb/GaAs Quantum Dots: Prospective Applications in Photovoltaic Cells
C. Ahia, University of Fort Hare, Alice, South Africa |
| 3BV.2.39 Wide-Bandgap III-V Photovoltaic Cell Development for Use in Ambient Light Harvesting
J. Browne, Tyndall National Institute, Cork, Ireland |
| 3BV.2.40 Atomic Structure and Optical Properties of 1.0 eV GaAsBi Absorber
T. Paulauskas, Center for Physical Sciences and Technology, Vilnius, Lithuania |
| 3BV.2.51 On Current Collection from Supporting Layers in Perovskite/c-Si Tandem Solar Cells
M. Singh, Delft University and Technology, Delft, Netherlands |
| 3BV.2.52 Perovskite/ACIGS 2-Terminal Tandem Solar Cells – Optimisation of Transport and Conductive Contact Layers
E. Ahlswede, ZSW, Stuttgart, Germany |
| 3BV.2.53 Monolithic Perovskite/Silicon-Heterojunction Tandem Solar Cells with Nanocrystalline Si/SiOx Tunnel Junction
P. Delli Veneri, ENEA, Portici, Italy |
| 3BV.2.54 Mechanically-Stacked and Electrically-Connected Two-Terminal Tandem Module
K. Nakamura, Toyota Technological Institute, Nagoya, Japan |
| 3BV.2.57 Bichromatic Light Source for Subcell Performance Analysis in Perovskite/Silicon Tandem Solar Cells
M. Jošt, University of Ljubljana, Ljubljana, Slovenia |
| 3BV.2.58 The Performance of Four-Terminal Perovskite-Silicon Tandem Solar Cells under Different Irradiance Levels
A.B. Nikolskaia, RAS, Moscow, Russian Federation |
| 3BV.2.59 Advanced LED Solar Simulator: Flexible and Fast Characterisation Tool for Research and Industrialisation of Perovskite/Silicon Tandem Solar Cells
B. Mitchell, Wavelabs Solar Metrology Systems, Leipzig, Germany |
| 3BV.2.60 The Impact of High Spectral Match: Using an LED Solar Simulator for Tandems
B.C. Duck, CSIRO Energy Technology, Mayfield West, Australia |
| 3BV.2.61 TCO Optimization of c-Si Heterojunction Solar Cells for Tandem Architecture by Optical Simulation
C. Summonte, CNR, Bologna, Italy |
| 3BV.2.62 Wide Bandgap Pure Sulfide CIGS Layers for Si/CIGS Tandem Cells from Metal Coevaporation Engineering and Sulfur Annealing
A. Crossay, IPVF, Palaiseau, France |
| 3BV.2.64 Interface Engineering of Silicon/Perovskite Two-Terminal Tandem Solar Cells
J. Sala, University Hasselt, Diepenbeek, Belgium |
| 3BV.2.65 Optimizing Top-TCO for Perovskite-Silicon Tandem Solar Cells
V. Sittinger, Fraunhofer IST, Braunschweig, Germany |
| 3BV.2.66 Energy Yield and Performance Ratio of III-V on Silicon Dual Junction Solar Cells in Different Climate Zones
O. Höhn, Fraunhofer ISE, Freiburg, Germany |
| 3BV.2.67 Influence of Wafer Pyramid Morphology on the Performance of Monolithic Perovskite-Silicon Tandem Solar Cells
A. Harter, HZB, Berlin, Germany |
| 3BV.2.68 Tunnel Junction Formation on Silicon P++ Emitters by Gas Immersion Laser Doping
G. Gaspar, University of Lisbon, Lisbon, Portugal |
| 3BV.2.69 Dual Quantum Tunneling in a Monolithic n-i-p Perovskite/c-Si Tandem Device: Bottom Cell with Modified SQIS Structure
Z. Ma, Shanghai University, Shanghai, China |
Conference Programme
