EU PVSEC Programme Online
EU PVSEC 2020, 7 - 11 September 2020
Session: 2DV.3 Crystalline Silicon Solar Cell Technologies
Type: Visual
Date: Thursday, 10th September 2020
13:30 - 15:00
Event: Conference Conference
Type(s) of Access:  Conference Registration
Topic: 2. Silicon Materials and Cells
2DV.3.2 Evaluation of Heterojunction Solar Cell Losses due to Half-Cell Processes
S. Großer, Fraunhofer CSP, Halle (Saale), Germany
2DV.3.3 Impact of Hydrogen Plasma Treatment on a-Si:H/a-SiOx:H Passivation Film
K. Saito, Fukushima University, Fukushima, Japan
2DV.3.4 Graphene-Based Transparent Electrode Incorporated into Silicon Heterojunction Solar Cell Technology
I. Torres, CIEMAT, Madrid, Spain
2DV.3.5 Laser-induced modification of doped poly-Si surface for Si solar cells with structured passivated contacts
S. Schäfer, ISFH, Emmerthal, Germany
2DV.3.7 Alternative CZ Ingot Squaring and Half-Cell Cutting Methodology for Low-Temperature PV Cell and Module Technologies
M. Albaric, CEA, Le Bourget-du-Lac, France
2DV.3.8 Silver- and Indium-Free Silicon Heterojunction Solar Cell
A. Lachowicz, CSEM, Neuchâtel, Switzerland
2DV.3.11 Advanced PERC Solar Cells with TOPCon Passivated Layers
S.-Y. Chen, ITRI, Tainan, Taiwan
2DV.3.12 Lean Integration of p- and n-type polySi Passivating Contacts Activated via Short or Long Annealing
A. Ingenito, CSEM, Neuchâtel, Switzerland
2DV.3.13 Doping Variation at the TCO/a-Si(p) Hole Contact
C. Luderer, Fraunhofer ISE, Freiburg, Germany
2DV.3.14 Technological Viability and Proof-of-Concept of Applying Low-Temperature PECVD SiNx for Inkjet-Masked Selective Emitters
B. Kafle, Fraunhofer ISE, Freiburg, Germany
2DV.3.15 Lithium Doped Nickel Oxide as Hole Transport Layer for Heterostructure Solar Cells
F. Menchini, ENEA, Rome, Italy
2DV.3.16 Insights on Cell Edge Defects Impact and Post-Process Repassivation for Heterojunction
B. Portaluppi, CEA, Le Bourget-du-Lac, France
2DV.3.17 Low-temperature Ag-Paste Screening for Silicon Heterojunction Solar Cells and Modules
S. Pingel, Fraunhofer ISE, Freiburg, Germany
2DV.3.18 Investigating the Effect of Interstitial Fe Impurity Contamination on n-Type Cz-Silicon Material for High Efficiency Solar Cell Processing
A. Hajjiah, Kuwait University, Safat, Kuwait
2DV.3.19 Front Side Optimization on Boron- and Gallium-Doped Cz-Si PERC Solar Cells Exceeding 22% Conversion Efficiency
E. Lohmüller, Fraunhofer ISE, Freiburg, Germany
2DV.3.21 PECVD Shadow Mask Deposition of Amorphous Silicon– a Shortcut to Local Passivating Contacts
M. Stöhr, ISFH, Emmerthal, Germany
2DV.3.22 Evidence of Charge Polarity Reversal in Silicon Oxide Film Deposited by Atomic Layer Deposition
T. Mochizuki, AIST, Koriyama, Japan
2DV.3.23 A Study on the Influence of Aluminum Oxide Layer Properties on Contact Formation
B. Gapp, University of Konstanz, Konstanz, Germany
2DV.3.24 Silicon Wafers with a Thickness below 130-Micrometers in Mass Production of Heterojunction Solar Cells
K. Emtsev, R&D Center TFTE, St. Petersburg, Russian Federation
2DV.3.26 Laser Annealing of Selective and Passivating Contact Layers for Crystalline Silicon Solar Cells
S. Haas, Forschungszentrum Jülich, Jülich, Germany
2DV.3.27 P-Type µc-Si:H Based Hole Selective Fired Passivating Contacts (FPC) without Hydrogenation After Firing
A. Desthieux, EDF R&D, Palaiseau, France
2DV.3.28 An Investigation of an Atmospheric Screen-Printable Cu Paste and Rapid Thermal Sintering Contact for Cost-Effective Silicon Solar Cell
A. Ebong, UNC Charlotte, Charlotte, USA
2DV.3.30 Improved Performance of TiOx Based Dopant-Free Selective Contact with Metal Doped TiOx
W. Liang, ANU, Canberra, Australia
2DV.3.31 Module Reliability of Solar Cells with Ultra-Thin Plated Metallization for Silver and Nickel Reduction
S. Hoffmann, Fraunhofer ISE, Freiburg, Germany
2DV.3.32 Rear-Emitter Si Heterojunction Solar Cells with Front n-Type SiOx Electron Collector and Back MoOx Hole Collector
P. Delli Veneri, ENEA, Portici, Italy
2DV.3.33 An Industrial Feasible n+ Poly-Si-IBC Screen Printed Solar Cell with 702 mV Voc on Large Area p-Type Substrates
L.J. Koduvelikulathu, ISC Konstanz, Konstanz, Germany
2DV.3.35 P- and n-Doped Layers Optimization for Silicon Heterojunction Solar Cells in the Rear Emitter Configuration
K. Emtsev, R&D Center TFTE, St. Petersburg, Russian Federation
2DV.3.36 Screen-Printed Aluminium Contacts on n+-Doped Silicon
S. Suzuki, Toyo Aluminium, Shiga, Japan
2DV.3.38 Reduced Surface Reflection of Solar Silicon and Solar Glass by Maskless Plasma Texturing with CHF3/H2
A. Okhorzina, Anhalt University of Applied Sciences, Köthen, Germany
2DV.3.39 Role of Wafer Thickness in Performance of Silicon Heterojunction Solar Cells
O. Astakhov, Forschungszentrum Jülich, Jülich, Germany
2DV.3.42 Colorization of Si Based Solar Cells and Panels Using Double Layer Coatings
M. Rudzikas, Center for Physical Sciences and Technology, Vilnius, Lithuania
2DV.3.44 Inverted Pyramids Texturization of Monocrystalline Silicon for Highly Efficient Light Trapping: Monitoring H2O2 Evaporation by Voltammetric Detection
C.-W. Lan, NTU, Taipei, Taiwan
2DV.3.45 Band-Offset Reduction for Effective Hole Carrier Collection in Bifacial Silicon Heterojunction Solar Cells
D.P. Pham, University of Sungkyunkwan, Suwon, Korea, Republic of
2DV.3.46 Local Laser Crystallization of a-Si on Tunneling SiOx for Passivated Contacts of Solar Cells
G. Jia, IPHT, Jena, Germany
2DV.3.48 Single-Step Periodic Photoelectrochemical Texturing of Silicon for Photovoltaics
N. Avishan, METU, Ankara, Turkey
2DV.3.49 New Procedure for Specific and High Absorbents Silicon Surface Nanotextures: Inverted Pyramids, Cubic Nano-Microholes, Spiroconical Nano-Microholes and Rhombohedral - Stared Nanosheets Bouquets
N.C.Y. Fall, Ziguinchor University, Ziguinchor, Senegal
2DV.3.51 Heterojunction Silicon Solar Cells Incorporating Unpatterned MoOx and LiFx/Al on Wet-Chemically Processed Silicon Surfaces
K. Tsoi, GÜNAM, Ankara, Turkey
2DV.3.52 Engineering SiO2/TiO2 Stacks for Improved Electron Selective Contacts
I. Costa, University of Lisbon, Lisbon, Portugal
2DV.3.53 Back Contact Coating to Increase the Efficiency of Polycrystalline Silicon Solar Cells
S. El-Hashash, AASTMT, Alexandria, Egypt
2DV.3.54 Phosphorus Doped Poly-Si Passivated Contacts by LPCVD and PECVD for Industrial Large-Area Solar Cells
A. Lanterne, CEA, Le Bourget-du-Lac, France