EU PVSEC Programme Online
EU PVSEC 2019, 9 - 13 September 2019, Marseille
Session: 2DV.1 Homojunction Solar Cells / Heterojunction Solar Cells
Type: Visual
Date: Thursday, 12th September 2019
12:45 - 15:00
Location / Room: Marseille Chanot Convention and Exhibition Centre, Garden Level / Poster Area
Event: Conference Conference
Type(s) of Access:  Conference Registration
Topic: 2. Silicon Materials and Cells
2DV.1.1 Surface Passivation of Atmospheric Pressure Dry Etched Multicrystalline Silicon Surfaces
A.I. Ridoy, Fraunhofer ISE, Freiburg, Germany
2DV.1.2 Functionalized Oxides for Bifacial Solar Cells with Passivated Contacts: First Results of the OXYGEN Project
T. Desrues, CEA, Le Bourget du Lac, France
2DV.1.3 Simultaneous Contacting of Boron and Phosphorus Doped Surfaces with a Single Screen Printing Paste
J.D. Huyeng, Fraunhofer ISE, Freiburg, Germany
2DV.1.4 Optimization of Boron Doping Paste for Simplified Fabrication of Interdigitated Back Contact Solar Cells
A. Aliefendioğlu, METU, Ankara, Turkey
2DV.1.5 A Comparative Study of Front and Rear Surface Passivation Techniques of Nitric Acid Oxidation of Silicon on Phosphorus-Diffused and Non-Diffused Textured Surfaces for p-Type Bifacial PERCS
S. Joonwichien, AIST, Koriyama, Japan
2DV.1.6 532 nm Laser Treated Selective Emitter Profiles Study with SIMS and ECV Technics
A. Moussi, CRTSE, Algiers, Algeria
2DV.1.7 Development of an Industrially-Relevant Process for Passivating Contacts on p-Type Silicon Wafers
A. Desthieux, EDF R&D, Palaiseau, France
2DV.1.8 Investigation on the Surface Texturing of the Casting Quasi-Single Crystal Silicon
Z. Ni, Talesun Solar, Changshu, China
2DV.1.9 Stability of the Regenerated p-Type Multi-Crystalline PERC Solar Cell after Light and Elevated Temperature Induced Degradation
J. Zhu, Institute for Energy Technology, Kjeller, Norway
2DV.1.10 High Voltage Solar Cells Based on Nanostructured Ultra-Thin Silicon
N. Moulin, INSA Lyon, Villeurbanne, France
2DV.1.11 Characteristics of Reaction Kinetics on Light-Induced Degradation and Regeneration Process with Passivation Properties in p-Type PERC Solar Cell
S.M. Kim, GERI, Gumi, Korea, Republic of
2DV.1.13 A Novel Method of Rear-Side Alkaline Polishing for Low-Cost and High-Efficiency PERC Solar Cells
T.-C. Chen, E-TON Solar Tech, Tainan, Taiwan
2DV.1.14 Effects of Particle Size of Aluminum Powder in Silver/Aluminum Paste on n-Type Solar Cells
T. Aoyama, Noritake, Miyoshi, Japan
2DV.1.15 Si Surface Passivation by GaOx Films Deposited Using a Mist Chemical Vapor Deposition Process
K. Arafune, University of Hyogo, Himeji, Japan
2DV.1.16 Comparative Study on Temperature Coefficients of Different Kinds of Industrial Silicon Solar Cells
H. Wang, Xi'an Jiaotong University, Xi'an, China et al.
2DV.1.17 Enhanced TiO2 Surface Passivation and Thermal Stability with Al Doping
W. Liang, ANU, Canberra, Australia
2DV.1.18 Optimization of Triple-Layer Antireflection Coating with SiOx on Black Silicon PERC Solar Cell
S. Zhang, Talesun Solar, Changshu, China
2DV.1.19 A Study on Aluminum Pastes for Rear Emitter in n-Type Silicon Solar Cells
M. Aoki, Asada Mesh, Matsubara, Japan
2DV.1.20 Investigating the Performance of Molybdenum Oxide-Silicon Nanowires Solar Cells
L. Chenjin, NTU Singapore, Singapore, Singapore
2DV.1.23 Understanding of UV-ps Laser Ablation Mechanisms on Bifacial n-PERT Silicon Solar Cells and Impact on Ni/Cu Plating
S. Karolien, IPVF, Palaiseau, France
2DV.1.24 Ultra-Fine Contact Finger Achieved by Pattern Transfer Printing (PTP) Technology for Silicon Solar Cells – Recent Development
A. Adrian, ISC Konstanz, Konstanz, Germany
2DV.1.25 Efficient Sprayed Al2O3 Surface Passivation for Multicrystalline Silicon Solar Cells
L. Zougar, CRTSE, Algiers, Algeria
2DV.1.26 Excellent Silicon Surface Passivation with Atomic Layer Deposited SiO2 Thin Films
S. Li, East China University of Science and Technology, Shanghai, China
2DV.1.27 Laser Enhanced Contact Optimization (LECO) and LECO-Specific Pastes –A Novel Technology for Improved Cell Efficiency
R.W. Mayberry, Heraeus, West Conshohocken, USA et al.
2DV.1.36 Identification of the Source of Degradation of Silicon Heterojunction Solar Cells from the Shape of the I-V Characteristics: Theory and Experimental Case Study
I. Gordon, imec, Leuven, Belgium
2DV.1.37 Power Loss Mechanisms of Ultra-Thin a-Si:H/c-Si Heterojunction Solar Cells with over 20% Efficiencies
H. Fujiwara, Gifu University, Gifu, Japan
2DV.1.38 Si-Based Heterojunction Solar Cells Passivated by a-SiOx:H Thin Film
K. Saito, Fukushima University, Fukushima, Japan
2DV.1.39 Silicon Heterojunction Solar Cells with Electroplated Copper Grid Electrodes
W. Long, Hanergy Thin Film Power, Chengdu, China
2DV.1.40 Development of Transparent Conductive Oxide for Silicon Heterojunction Solar Cell
K. Nakamura, Toyota Technological Institute, Nagoya, Japan
2DV.1.41 Effect of Argon-Hydrogen Gas Mixture on Properties of ITO Layers and Performance of Silicon Heterojunction Solar Cells
P. Ishmuratov, Hevel Solar, Novocheboksarsk, Russian Federation
2DV.1.42 Progress in In2O3-Based Transparent Conductive Oxide Films for Solar Cells
T. Koida, AIST, Tsukuba, Japan
2DV.1.43 Overview of Deposition Methods for Heterojunction Solar Cells with High Deposition Rates
S. Leszczynski, Technical University of Dresden, Dresden, Germany
2DV.1.44 DC Sputtering of TCO Layers in Neon Atmosphere and Its Application to Silicon Heterojunction Solar Cells
S. Abolmasov, R&D Center TFTE, St. Petersburg, Russian Federation
2DV.1.45 17.25%-Efficient, All Room-Temperature Silicon Solar Cells
S.-H. Kim, Hanyang University, Ansan, Korea, Republic of
2DV.1.46 Room-Temperature Processed Dopant Free Carrier Selective Contact Solar Cells on Industrially Viable Cz Silicon Wafers
S. Mandal, IIT Delhi, New Delhi, India
2DV.1.47 Study of the Influence of Defects in Doped Thin-Film Layers in Heterojunction Silicon Solar Cells Employing Opto-Electrical Simulations
J. Balent, University of Ljubljana, Ljubljana, Slovenia
2DV.1.48 Contact Resistivity of the TCO/a-Si:H/c-Si Heterojunction
C. Luderer, Fraunhofer ISE, Freiburg, Germany
2DV.1.49 Impact of Interfacial SiOx on Carrier Selectivity and Thermal Stability of Transition Metal Oxide
J. Tong , ANU, Canberra, Australia
2DV.1.50 Hydrogen-Doped In2O3 as High Mobility TCO for Silicon Heterojunction Solar Cell Application
M.L. Addonizio, ENEA, Portici, Italy
2DV.1.51 Approach to Clarify the Cause of Handling Defects in Silicon Heterojunction Cell Production through the Interplay of Different Imaging Techniques
A. Fischer, Fraunhofer ISE, Freiburg, Germany
2DV.1.52 The Economic Case for IBC Silicon Heterojunction Solar Cells
R. Vasudevan, CEA, Le Bourget du Lac, France
2DV.1.53 Improved Front Contact for Silicon Heterojunction Solar Cells with n-Type Nanocrystalline Silicon Oxide Window Layer
W. Duan, Forschungszentrum Jülich, Jülich, Germany
2DV.1.54 Graphene Application as Non Conventional Transparent Conductive Electrode in c-Si Based Heterojunction Solar Cells
L. Lancellotti, ENEA, Portici, Italy
2DV.1.55 Optimization Studies on the Material Properties of ITO as Window Layer for Silicon Heterojunction Solar Cells
S. Güler, METU, Ankara, Turkey
2DV.1.56 Development of Phosphorus Thin Doped Layers by Plasma Immersion for Homo- Hetero Junction Solar Cells Application
J. Jourdan, CEA, Le Bourget du Lac, France
2DV.1.57 Application of Different Gas Mixtures Types in p-Doped Layers of Silicon Heterojunction Solar Cells in the Rear Emitter Configuration
A.V. Semenov, Hevel Solar, Novocheboksarsk, Russian Federation
2DV.1.59 Understanding of the Influence of the Surface Defectivity on Silicon Heterojunction Cell Performance
V. Giglia, CEA, Le Bourget du Lac, France
2DV.1.60 Optoelectronic Properties of Sputtered TCOs and Their Application in Silicon Heterojunction Solar Cells
Z. Yao, Forschungszentrum Jülich, Jülich, Germany
2DV.1.61 Copper Plating Processes for Silicon Heterojunction Solar Cells: An Overview
A. Lachowicz, CSEM, Neuchâtel, Switzerland
2DV.1.62 Thermally Stable MoOx Hole Selective Contact with a Tunneling AlOx Interlayer for Industrial Size Silicon Solar Cells
M.T.S.K. Ah Sen, ECN part of TNO, Petten, Netherlands
2DV.1.63 TCO Layers with High Charge Carrier Mobility as Transparent Conductive Contacts for Silicon Heterojunction Solar Cells
P. Ishmuratov, Hevel Solar, Novocheboksarsk, Russian Federation
2DV.1.65 Investigation of Silicon Films for Heterojunction Solar Cells Deposited by Hot-Wire CVD
V. Sittinger, Fraunhofer IST, Braunschweig, Germany
2DV.1.66 Integrating Nanopyramid Gratings into Crystalline Silicon Solar Cells: Augmenting the Absorption of Infrared Photons
A. Razzaq, imec, Leuven, Belgium
2DV.1.67 Limits of the Open-Circuit Voltage and Fill Factor in Thin Silicon Heterojunction Solar Cells
O. Astakhov, Forschungszentrum Jülich, Jülich, Germany
2DV.1.68 Interplay of Intrinsic and Doped Amorphous Silicon Layer and ITO Properties and Process Conditions on Contact Passivation in Silicon Heterojunction Cells
I. Gordon, imec, Leuven, Belgium
2DV.1.69 Poly-Si Passivated Solar Cells Fabricated by Firing Contact Metallization with the Shallow Silver Penetration
M.-T. Kuo, ITRI, Hsinchu, Taiwan
2DV.1.71 Development and Characterization of Silicon-Rich Nitride Layers for Silicon Solar Cell Passivating Contacts
R. Sharma, imec, Leuven, Belgium
2DV.1.72 Plasma Oxidation for Polycrystalline Silicon-Based Passivated Contact
B. Hoex, UNSW Australia, Sydney, Australia
2DV.1.74 Analysis of Boron Doped Hydrogenated Amorphous Silicon Carbide Layer for Silicon Heterojunction Solar Cells
A. Salimi, METU, Ankara, Turkey