| Presentations: |
| 2DV.1.1 Surface Passivation of Atmospheric Pressure Dry Etched Multicrystalline Silicon Surfaces
A.I. Ridoy, Fraunhofer ISE, Freiburg, Germany |
| 2DV.1.2 Functionalized Oxides for Bifacial Solar Cells with Passivated Contacts: First Results of the OXYGEN Project
T. Desrues, CEA, Le Bourget du Lac, France |
| 2DV.1.3 Simultaneous Contacting of Boron and Phosphorus Doped Surfaces with a Single Screen Printing Paste
J.D. Huyeng, Fraunhofer ISE, Freiburg, Germany |
| 2DV.1.4 Optimization of Boron Doping Paste for Simplified Fabrication of Interdigitated Back Contact Solar Cells
A. Aliefendioğlu, METU, Ankara, Turkey |
| 2DV.1.5 A Comparison Study of Front and Rear Surface Passivation Techniques of Nitric Acid Oxidation of Silicon on Phosphorus-Diffused and Non-Diffused Texture Surfaces for p-Type Bifacial PERC
S. Joonwichien, AIST, Koriyama, Japan |
| 2DV.1.6 532 nm Laser Treated Selective Emitter Profiles Study with SIMS and ECV Technics
A. Moussi, CRTSE, Algiers, Algeria |
| 2DV.1.7 Development of an Industrially-Relevant Process for Passivating Contacts on p-Type Silicon Wafers
A. Desthieux, EDF R&D, Palaiseau, France |
| 2DV.1.8 Investigation on the Surface Texturing of the Casting Quasi-Single Crystal Silicon
D. Hu, Talesun Solar, Changshu, China |
| 2DV.1.9 Stability of the Regenerated p-Type Multi-Crystalline PERC Solar Cells after Light and Evaluated Temperature Induced Degradation
J. Zhu, Institute for Energy Technology, Kjeller, Norway |
| 2DV.1.10 High Voltage Solar Cells Based on Nanostructured Ultra-Thin Silicon
N. Moulin, INSA Lyon, Villeurbanne, France |
| 2DV.1.11 Characteristics of Reaction Kinetics on Light-Induced Degradation and Regeneration Process with Passivation Properties in p-Type PERC Solar Cell
S.M. Kim, GERI, Gumi, Korea, Republic of |
| 2DV.1.13 A Novel Method of Rear-Side Alkaline Polishing for Low-Cost and High-Efficiency PERC Solar Cells
T.-C. Chen, E-TON Solar Tech, Tainan, Taiwan |
| 2DV.1.14 Effects of Particle Size of Aluminum Powder in Silver/Aluminum Paste on n-Type Solar Cells
T. Aoyama, Noritake, Miyoshi, Japan |
| 2DV.1.15 Si Surface Passivation by GaOx Films Deposited Using a Mist Chemical Vapor Deposition Process
K. Arafune, University of Hyogo, Himeji, Japan |
| 2DV.1.16 Comparative Study on Temperature Coefficients of Different Kinds of Industrial Silicon Solar Cells
H. Wang, Xi'an Jiaotong University, Xi'an, China et al. |
| 2DV.1.17 Enhanced TiO2 Surface Passivation and Thermal Stability with Al Doping
W. Liang, ANU, Canberra, Australia |
| 2DV.1.18 Optimization of Triple-Layer Antireflection Coating with SiOx on Black Silicon PERC Solar Cell
S. Zhang, Talesun Solar, Changshu, China |
| 2DV.1.19 A Study on Aluminum Pastes for Rear Emitter in n-Type Silicon Solar Cells
M. Aoki, Asada Mesh, Matsubara, Japan |
| 2DV.1.20 Investigating the Performance of Molybdenum Oxide-Silicon Nanowires Solar Cells
C. Lu, NTU Singapore, Singapore, Singapore |
| 2DV.1.22 PECVD Grown SiOx/Poly-Si for TOPCon Solar Cell Application
L. Zhang, Applied Materials, Santa Clara, USA |
| 2DV.1.23 Understanding of UV-ps Laser Ablation Mechanisms on Bifacial n-PERT Silicon Solar Cells and Impact on Ni/Cu Plating
C. Molto, IPVF, Palaiseau, France |
| 2DV.1.24 Ultra-Fine Contact Finger Achieved by Pattern Transfer Printing (PTP) Technology for Silicon Solar Cells – Recent Development
A. Adrian, ISC Konstanz, Konstanz, Germany |
| 2DV.1.25 Efficient Sprayed Al2O3 Surface Passivation for Multicrystalline Silicon Solar Cells
L. Zougar, CRTSE, Algiers, Algeria |
| 2DV.1.26 Excellent Silicon Surface Passivation with Atomic Layer Deposited SiO2 Thin Films
S. Li, East China University of Science and Technology, Shanghai, China |
| 2DV.1.35 Recent Results for the Deployment of Silicon Heterojunction Production Lines at ENEL Green Power: Effect of the Number of Busbars
W. Favre, CEA, Le Bourget du Lac, France |
| 2DV.1.36 Identification of the Source of Degradation of Silicon Heterojunction Solar Cells from the Shape of the I-V Characteristics Linked to Its Dependence on the Doping Level in a-Si:H: Theory and Experimental Case Study
I. Gordon, imec, Leuven, Belgium |
| 2DV.1.37 Power Loss Mechanisms of Ultra-Thin a-Si:H/c-Si Heterojunction Solar Cells with over 20% Efficiencies
H. Fujiwara, Gifu University, Gifu, Japan |
| 2DV.1.38 Si-Based Heterojunction Solar Cells Passivated by a-SiOx:H Thin Film
K. Saito, Fukushima University, Fukushima, Japan |
| 2DV.1.39 Silicon Heterojunction Solar Cells with Electroplated Copper Grid Electrodes
W. Long, Hanergy Thin Film Power, Chengdu, China |
| 2DV.1.40 Development of Transparent Conductive Oxide for Silicon Heterojunction Solar Cell
K. Nakamura, Toyota Technological Institute, Nagoya, Japan |
| 2DV.1.41 Effect of Argon-Hydrogen Gas Mixture on Properties of ITO Layers and Performance of Silicon Heterojunction Solar Cells
P. Ishmuratov, Hevel Solar, Novocheboksarsk, Russian Federation |
| 2DV.1.42 Progress in In2O3-Based Transparent Conductive Oxide Films for Solar Cells
T. Koida, AIST, Tsukuba, Japan |
| 2DV.1.43 Overview of Deposition Methods for Heterojunction Solar Cells with High Deposition Rates
S. Leszczynski, Technical University of Dresden, Dresden, Germany |
| 2DV.1.44 DC Sputtering of TCO Layers in Neon Atmosphere and Its Application to Silicon Heterojunction Solar Cells
S. Abolmasov, R&D Center TFTE, St. Petersburg, Russian Federation |
| 2DV.1.45 17.25%-Efficient, All Room-Temperature Silicon Solar Cells
S.-H. Kim, Hanyang University, Ansan, Korea, Republic of |
| 2DV.1.46 Room Temperature Dopant Free Carrier Selective Contact Solar Cells on Industrially Viable Cz Wafers
S. Mandal, IIT Delhi, New Delhi, India |
| 2DV.1.47 Study of the Influence of Defects in Doped Thin-Film Layers in Heterojunction Silicon Solar Cells Employing Opto-Electrical Simulations
J. Balent, University of Ljubljana, Ljubljana, Slovenia |
| 2DV.1.48 Transport Losses at the TCO/a-Si:H/c-Si Heterojunction: Influence of Different Layers and Annealing
C. Luderer, Fraunhofer ISE, Freiburg, Germany |
| 2DV.1.49 Impact of Interfacial SiOx on Carrier Selectivity and Thermal Stability of Transition Metal Oxide
J. Tong , ANU, Canberra, Australia |
| 2DV.1.50 Hydrogen-Doped In2O3 as High Mobility TCO for Silicon Heterojunction Solar Cell Application
M.L. Addonizio, ENEA, Portici, Italy |
| 2DV.1.51 Approach to Clarify the Cause of Handling Defects in SHJ Cell Production through the Interplay of Different Imaging Techniques
A. Fischer, Fraunhofer ISE, Freiburg, Germany |
| 2DV.1.52 The Economic Case for IBC Silicon Heterojunction Solar Cells
R. Vasudevan, CEA, Le Bourget du Lac, France |
| 2DV.1.53 Improved Front Contact for Silicon Heterojunction Solar Cells with n-Type Nanocrystalline Silicon Oxide Window Layer
W. Duan, Forschungszentrum Jülich, Jülich, Germany |
| 2DV.1.54 Graphene Application as Non Conventional Transparent Conductive Electrode in c-Si Based Heterojunction Solar Cells
L. Lancellotti, ENEA, Portici, Italy |
| 2DV.1.55 Optimization Studies on the Material Properties of ITO as Window Layer for Silicon Heterojunction Solar Cells
S. Güler, METU, Ankara, Turkey |
| 2DV.1.56 Development of Phosphorus Thin Doped Layers by Plasma Immersion for Homo- Hetero Junction Solar Cells Application
J. Jourdan, CEA, Le Bourget du Lac, France |
| 2DV.1.57 Application of Different Gas Mixtures Types in p-Doped Layers of Silicon Heterojunction Solar Cells in the Rear Emitter Configuration
A.V. Semenov, RAS / Ioffe, St. Petersburg, Russian Federation |
| 2DV.1.59 Influence of Surface Defectivity on the Performances of Silicon Heterojunction Solar Cells
V. Giglia, CEA, Le Bourget du Lac, France |
| 2DV.1.60 Optoelectronic Properties of Sputtered TCOs and Their Application in Silicon Heterojunction Solar Cells
Z. Yao, Forschungszentrum Jülich, Jülich, Germany |
| 2DV.1.61 Plating Processes for Silicon Heterojunction Cells: An Overview
A. Lachowicz, CSEM, Neuchâtel, Switzerland |
| 2DV.1.62 Thermally Stable MoOx Hole Selective Contact with a Tunneling Interlayer for Industrial Size Silicon Solar Cells
M.T.S.K. Ah Sen, ECN, Petten, Netherlands |
| 2DV.1.63 TCO Layers with High Charge Carrier Mobility as Transparent Conductive Contacts for Silicon Heterojunction Solar Cells
P. Ishmuratov, Hevel Solar, Novocheboksarsk, Russian Federation |
| 2DV.1.64 A Proposed Flexible p-Si/n-ZnO Heterojunction Based All Solid-State Solar Cell
A.K. Dikshit, IIT, Varanasi, India |
| 2DV.1.65 Investigation of Silicon Films for Heterojunction Solar Cells Deposited by Hot-Wire CVD
V. Sittinger, Fraunhofer IST, Braunschweig, Germany |
| 2DV.1.66 Integrating Nanopyramid Gratings into Crystalline Silicon Solar Cells: Augmenting the Absorption of Infrared Photons
A. Razzaq, imec, Leuven, Belgium |
| 2DV.1.67 Limits of the Open-Circuit Voltage and Fill Factor in Thin Silicon Heterojunction Solar Cells
O. Astakhov, Forschungszentrum Jülich, Jülich, Germany |
| 2DV.1.68 Interplay of Intrinsic and Doped Amorphous Silicon Layer and ITO Properties and Process Conditions on Contact Passivation in Silicon Heterojunction Cells
T.S. Yadav, IIT Bombay, Mumbai, India |
| 2DV.1.69 Poly-Si Passivated Solar Cells Fabricated by Firing Contact Metallization with the Shallow Silver Penetration
M.-T. Kuo, ITRI, Hsinchu, Taiwan |
| 2DV.1.71 Development and Characterization of Silicon-Rich Nitride Layers for Silicon Solar Cell Passivating Contacts
R. Sharma, imec, Leuven, Belgium |
| 2DV.1.72 Plasma Oxidation for Polycrystalline Silicon-Based Passivated Contact
B. Hoex, UNSW Australia, Sydney, Australia |
| 2DV.1.73 Effect of a-Si: H Layer Thickness on the Passivation of the c-Si Wafers in the Heterojunction Solar Cells
A. Trad-Khodja, CRTSE, Algiers, Algeria |
Conference Programme
