EU PVSEC Programme Online
EU PVSEC 2019, 9 - 13 September 2019, Marseille
Session: 2CV.2 Feedstock, Crystallisation, Wafering, Defect Engineering/Thin Film and Foil-Based Si Solar Cells/Characterisation & Simulation o
Type: Visual
Date: Wednesday, 11th September 2019
12:45 - 15:00
Location / Room: Marseille Chanot Convention and Exhibition Centre, Garden Level / Poster Area
Chairperson(s): M. Topic, University of Ljubljana, Ljubljana, Slovenia
Event: Conference Conference
Type(s) of Access:  Conference Registration
Topic: 2. Silicon Materials and Cells
Presentations:
2CV.2.2 Key Structures in Silicon Heterojunction Solar Cells for the Complete Regeneration of BO-Related Defects in n-Type Upgraded Metallurgical-Grade Czochralski Silicon
C. Sun, ANU, Canberra, Australia
2CV.2.3 Elucidating the Role of the Thermal Budget on the Bulk Degradation of n-TypeCzochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers During theProcessing of Phosphorus-Doped Polysilicon Cells
R. Basnet, ANU, Canberra, Australia
2CV.2.4 Degradation and Regeneration of n+-Poly-Si on Oxide Surface Passivation under Illumination and Dark Annealing on p-Type Cz-Si
M. Winter, ISFH, Emmerthal, Germany
2CV.2.5 Light and Elevated Temperature Induced Degradation in p- and n-Type Mono-Like Silicon and Float Zone Silicon Materials and Their Correlation with Silicon Nitride Film Properties
D. Kang, ANU, Canberra, Australia
2CV.2.6 LeTID Studied by Hyperspectral Photoluminescence Imaging
T. Mehl, NMBU, Ås, Norway
2CV.2.7 Trapping in Multi-Crystalline Silicon Wafers: Impact of Laser Treatment and Firing
S. Jafari, UNSW Australia, Sydney, Australia
2CV.2.9 Investigations of Grain Boundary Defects and Precipitates in Multi-Crystalline Silicon Wafers with EBSD, TEM, and Hyperspectral Photoluminescence Imaging
A. Thøgersen, SINTEF, Oslo, Norway
2CV.2.11 Investigation of the Influence of Solar Cell Processing on Structural Defects in HPMC-Si Wafers by Photoluminescence Image Analysis
H. Haug, Institute for Energy Technology, Kjeller, Norway
2CV.2.12 Investigation of Spectral Dependence of Efficiency and Deep-Level Defects in Active Layers of Multicrystalline Silicon Solar Cells
S.M. Karabanov, RSREU, Ryazan, Russian Federation
2CV.2.14 Mathematical Modeling of Electromagnetic Stirring of Silicon Melt under the Conditions of a Travelling Magnetic Field
S.M. Karabanov, RSREU, Ryazan, Russian Federation
2CV.2.15 Generation and Propagation of Dislocation Clusters Originated from Multicrystallization by Σ.3n Rotation and in Quasi-Monocrystalline Silicon
T. Kojima, Nagoya University, Nagoya, Japan
2CV.2.16 Further Tests of Methods to Reduce the Red-Zone in the Top Region of MC - Silicon Ingots
T. Bähr, Access, Aachen, Germany
2CV.2.17 Evaluation of Improvement Strategies of Grain Structure Properties in High Performance Multi-Crystalline Silicon Ingots
M. Trempa, Fraunhofer IISB, Erlangen, Germany
2CV.2.18 The Development of 3D Visualization of Ingot Structure Based on Digital Processing of Photoluminescent Wafer Images of Multicrystalline Silicon
S.M. Karabanov, RSREU, Ryazan, Russian Federation
2CV.2.19 Reduced Oxygen Contamination in Directionally Solidified Multi-Crystalline Silicon Ingots by Adjusted Silicon Nitride Coating
S. Schwanke, Fraunhofer IISB, Erlangen, Germany
2CV.2.20 Cost Effective Growth of Silicon Mono Ingots by the Application of Active Crystal Cooling in Combination with Large Melt Volumes in Cz-Puller
F. Mosel, PVA Crystal Growing Systems, Wettenberg, Germany
2CV.2.21 Mono-Like Silicon Ingot Casting Based on Simulation Result in Electron-Beam Melting System
J.-K. Lee, KIER, Daejeon, Korea, Republic of
2CV.2.22 An Approach for Implementing Machine Learning in the Solar Industry
A. Schlezinger, Applied Materials, Santa Clara, USA
2CV.2.23 On the Mechanical Strength of Diamond-Sawn Monocrystalline, Multicrystalline and Quasi-Monocrystalline Silicon Wafers: Influence of Thickness and Saw Mark Orientation
L. Carton, CEA-LITEN, Le Bourget du Lac, France
2CV.2.24 Variation of Silicon Wafer Strength and Edge Chipping Induced by Residual Stresses at the Brick Bonding Interface
R. Koepge, Fraunhofer CSP, Halle (Saale), Germany
2CV.2.31 Adoption of Wide-Bandgap Microcrystalline Silicon Oxide and Dual Buffers for Semitransparent Solar Cells in Building-Integrated Photovoltaic Window System
J.-D. Kwon, KIMS, Changwon, Korea, Republic of
2CV.2.32 Power Increase of Transparent a-Si:H Solar Cells Using Albedo Effects
J.W. Lim, ETRI, Daejeon, Korea, Republic of
2CV.2.33 Analysis of the Bowing Phenomenon Using 100um Scale Partially Processed c-Si Solar Cells
J.-R. Lim, KIER, Daejeon, Korea, Republic of
2CV.2.38 Performance Characterization for Bifacial Photovoltaic Modules
W.J. Wang, CAS, Beijing, China
2CV.2.42 Investigation of the Accelerated Light Soaking Testing for p-Type PERC Cell with and without Laser LIR Technology
C.-W. Kuo, TSEC, Hsinchu, Taiwan
2CV.2.43 Analysis of Degradation in Metallization Process with E-Beam Evaporation in High-Efficiency n-Type Silicon Solar Cells
D. Choi, Korea University, Seoul, Korea, Republic of
2CV.2.44 Non-Destructive Approach for Measuring Base Resistivity of Emitter-Diffused,Partially-Processed Wafers Using Temperature-Stage QSSPC
V. Kuruganti, Fraunhofer ISE, Freiburg, Germany
2CV.2.45 Evidence of Solute PEDOT:PSS as an Efficient Passivation Material
V.H. Nguyen, Nagoya University, Nagoya, Japan
2CV.2.49 Improving the Analysis of Contact Recombination by Photoluminescence Imaging
P. Manshanden, ECN part of TNO, Petten, Netherlands
2CV.2.50 Sublayer-Resolved Structure Analysis of Passivation Layers for PERC Cells Deposited by a High-Throughput Inline PECVD Process
S. Großer, Fraunhofer CSP, Halle (Saale), Germany
2CV.2.51 Point-by-Point Parameter Mapping of a mc-Si Solar Cell
N. Kwarikunda, Makerere University, Kampala, Uganda
2CV.2.52 A New Measurement of Voc Temperature Coefficients at Very Large Temperature Range
M. Amara, INSA Lyon, Villeurbanne, France
2CV.2.53 Effects of Si Bulk Defects Generated by SiNx:H PECVD on Light Induced Degradation
Y. Ohshita, Toyota Technological Institute, Nagoya, Japan
2CV.2.54 FDTD Simulations of Structures Created by the Black-SiN Method to Optimize the Reflection Reduction of Solar Cells
M. John, Anhalt University of Applied Sciences, Köthen, Germany
2CV.2.55 Powerful Topographic Analysis Method Using Fast Fourier Transform for c-Si Solar Cells and Emerging Technologies
K. Saliou, IPVF, Palaiseau, France
2CV.2.56 Life(Time) at the Limits – Very High Lifetimes in Crystalline Silicon Measured by Photoconductance and Photoluminescence
B. Steinhauser, Fraunhofer ISE, Freiburg, Germany
2CV.2.57 Opto-Electronic Properties of Dislocations in Cast-Mono Silicon for Solar Cells
D. Ory, EDF R&D, Palaiseau, France
2CV.2.58 Porous Silicon Low Dielectric Constant Thin Films and Its Application in Solar Cell
K. Rahmoun, University of Tlemcen, Tlemcen, Algeria
2CV.2.59 Accurate Performance Measurement of c-Si Solar Cells Adopting Advanced Metallization Technologies
S.K. Ahn, KIER, Daejeon, Korea, Republic of
2CV.2.60 Comparing Near-Field Calculations and Effective Medium Models for Light Reflection and Absorption of Black Silicon Nano-Textures
T.P.N. Veeken, AMOLF, Amsterdam, Netherlands
2CV.2.61 Impact of AlO and SiN Thickness on Field-Effect Passivation of AlO/SiN Dielectric Stacks on Crystalline Silicon
T. Mochizuki, AIST, Koriyama, Japan
2CV.2.62 Development of New Probe Bar for c-Si PV Cells with Unique Electrode Design Such as Busbar-Less, Multi Busbar and Complicated Busbar
K. Iwamoto, KOPEL, Kyoto, Japan
2CV.2.63 Analysis of Laser Boron Doping and Laser Damage
N. Yang, ECUST, Shanghai, China
2CV.2.64 Investigation of the Temperature Dependence of the Optical Properties of Silicon Nitride Anti-Reflection Coating on Silicon Photovoltaic Modules
R. Bhoopathy, UNSW Australia, Sydney, Australia
2CV.2.65 Light Trapping with Free-Floating Arrays of Subwavelength Trumpet Non-Imaging Light Concentrators
A. Prajapati, BGU, Beer-Sheva, Israel
2CV.2.72 Key Aspects for Industrial Efficiency above 22% PERC Solar Cells Based on Double-Side AlOx Passivation
Y. Cui, Risen Energy, Changzhou, China
2CV.2.73 Simplify Printed-ALOx PERC Cell Process: A PDA-Free Process
T.-C. Chen, E-TON Solar Tech, Tainan, Taiwan
2CV.2.74 The AMPERE Project Key Exploitable Result: A Bifacial Heterojunction Cell and Module Industrial Automated Manufacturing Plant in Europe
C. Colletti, ENEL Green Power, Catania, Italy
2CV.2.75 23% Efficient Industrial Bifacial n-Type Crystalline Silicon Solar Cells with Electron-Selective Poly-Silicon Passivated Contacts
W. Wang, GCL System Integration Technology, Suzhou, China
2CV.2.76 Inverted Pyramid Texturing of Monocrystalline Silicon Wafer
C.-W. Lan, NTU, Taipei, Taiwan
2CV.2.77 Influence of the Acidic Texturing Structure on the Different Surface Roughness for Solar Cell
Y. Jung, Korea University, Seoul, Korea, Republic of
2CV.2.78 Simultaneous Front-Side Texturing and Rear-Side Polishing of Monocrystalline Silicon Wafer by Spray-Etching with HF-HCl-Cl2 Mixtures
K. Halbfaß, Freiberg University of Technology, Freiberg, Germany
2CV.2.79 Industrially MCCE Textured Cells on Monolike Substrates
Z. Xu, Yingli Green Energy, Baoding, China
2CV.2.81 Metal Assisted Texturing on Micro Pyramids for Enhanced Anti Reflective Properties
R. Turan, METU, Ankara, Turkey
2CV.2.82 Uniformity of Black Silicon Texture and Its Impact on Cell Performance
M.U. Khan, UNSW Australia, Sydney, Australia
2CV.2.83 Process Optimization for Inline Black Silicon Based Solar Cell Production Line
M.C. Raval, RCT Solutions, Constance, Germany
2CV.2.85 Investigation of Laser Damage for Selective Emitter Silicon Solar Cells
W. Wang, GCL System Integration Technology, Suzhou, China
2CV.2.86 Hydrosilane-Free Low-Cost APCVD of SiO2 Films for Crystalline Si Solar Cell Applications
H. Nagel, Fraunhofer ISE, Freiburg, Germany
2CV.2.87 Plasma Oxidation for the Front Side Passivation of PERC Solar Cells
A. Mohamed Okasha Mohamed Okasha, Fraunhofer ISE, Freiburg, Germany
2CV.2.88 Multivariate Statistical Modelling to Correlate PECVD Layer Properties with Plasma Chemistry during Silicon Nitride Deposition
L. Rachdi, Fraunhofer ISE, Freiburg, Germany
2CV.2.89 LPCVD In-Situ Doped Phosphorus Polysilicon Layers for Passivated Contact Solar Cells
B. Martel, CEA, Le Bourget du Lac, France
2CV.2.90 Highly Transparent and Highly Conductive Magnetron Sputtered TCO-Layers for Industrial Production of Heterojunction Silicon Solar Cells
S. Hübner, Singulus Technologies, Kahl am Main, Germany
2CV.2.91 Development of Nanostructured FTO Films as Transparent and Diffuse Electrodes and Their Integration in Silicon Solar Cells
A. Fave, INSA Lyon, Villeurbanne, France
2CV.2.92 Low-Energy Plasma-Assisted Deposition of ITO Thin Films for Si Solar Cells by Sublimation in an Anodic Vacuum Arc Discharge
B. Scheffel, Fraunhofer FEP, Dresden, Germany
2CV.2.93 FolMet-Connect: Progress of Al-Foil Based Metallization Technology for PERC Cells
J. Paschen, Fraunhofer ISE, Freiburg, Germany
2CV.2.94 Plated Front Side Metallization on Transparent Conducting Oxide Utilizing Low-Cost APCVD SiO2 Insulating Layer
E. Issa, Fraunhofer ISE, Freiburg, Germany
2CV.2.95 A Solution for In-Situ Spatially-Resolved Intensity Measurements in Belt Furnaces
A. Herguth, University of Konstanz, Constance, Germany
2CV.2.96 Photoluminescence Imaging for Inline Detection of Organic Residues on Silicon Wafers
B. Ahrens, University of Applied Sciences, Soest, Germany
2CV.2.97 Contacting New Solar Cell Metallization Layouts and Contact Quality Surveillance in Solar Cell Production
K. Ramspeck, h.a.l.m. elektronik, Frankfurt, Germany
2CV.2.98 Sorting Criteria for Bifacial PERC Cells for Improved Module Classification
N. Wöhrle, Fraunhofer ISE, Freiburg, Germany
2CV.2.99 Industry 4.0 PV Factory of the Future: Installing a Test-Bed in a Solar Research Facility
S. Sasidharan, ISC Konstanz, Konstanz, Germany
2CV.2.100 New Approach for a Combined Process of an Ultrafast Boron-Oxygen Defect Regeneration and Thermal Contact Treatment of Ni/Cu/Ag Plated Solar Cells
S. Roder, Fraunhofer ISE, Freiburg, Germany
2CV.2.101 Comparing Cz-Si PERC Solar Cells from Various Manufacturers Regarding BO-Related Light-Induced Degradation and Regeneration
D.C. Walter, ISFH, Emmerthal, Germany
2CV.2.102 Micro- and Macrotextured Foils for Solar Cells Application
O. Sergeev, DLR, Oldenburg, Germany
2CV.2.103 Knotless Screens for Ultra-Fine Line Screen Printing of Si-Solar Cells – Towards Front-Side Silver Electrode Widths below 20μm
F. Clement, Fraunhofer ISE, Freiburg, Germany