EU PVSEC Programme Online
EU PVSEC 2019, 9 - 13 September 2019, Marseille
Session: 3BV.1 CI(G)S, CdTe and Related Thin Film Solar Cells / III-V and Related Compound Semiconductor Based Devices
Type: Visual
Date: Tuesday, 10th September 2019
08:30 - 10:00
Location / Room: Marseille Chanot Convention and Exhibition Centre, Garden Level / Poster Area
Chairperson(s): V. Sittinger, Fraunhofer IST, Braunschweig, Germany
G. Timò, RSE, Piacenza, Italy
Event: Conference Conference
Type(s) of Access:  Conference Registration
Topic: 3. Perovskites, other Non-Silicon-Based Photovoltaics and Multi-Junction Devices
3BV.1.3 Comparison of Accelerated Ageing and Metastabilities between CIGS Based Solar Cells and Thin-Film Modules
R. Vidal Lorbada, Ulm University of Applied Sciences, Ulm, Germany
3BV.1.4 Novel Two-Stage Processing Technique towards Wide Spreading of CIGS Solar Cell Industry with Materially Efficient Fabrication
Y. Cho, KIER, Daejeon, Korea, Republic of
3BV.1.6 A European Thin Film Tandem Device Proficiency Test - Practical Outcomes and Preliminary Results
I. Lauermann, HZB, Berlin, Germany
3BV.1.7 Increased PID Immunity of Cu(In,Ga)Se2 Solar Cells
O. Salomon, ZSW, Stuttgart, Germany
3BV.1.9 Light Management in Ultra-Thin Cu(In, Ga)Se2 Photovoltaic Devices
M. Kovacic, University of Ljubljana, Ljubljana, Slovenia
3BV.1.10 CIGS Device Processing on Insulated (Stainless) Steel Foils
F. Kessler, ZSW, Stuttgart, Germany
3BV.1.11 Effects of Selenium Partial Pressure on Cu(In,Ga)Se2 Solar Cells
L.-H. Tu, NTHU, Hsinchu, Taiwan
3BV.1.12 The “Absolute” Quantification of Solar Absorber via a Cross-Characterization Method: The Example of Cu(In,Ga)Se2
D. Messou, IPVF, Palaiseau, France
3BV.1.13 Air Reactivity of CIGS and CdTe Solar Absorbers Characterized by XPS Measurements
M. Bouttemy, UVSQ, Versailles, France
3BV.1.14 Tailoring the Properties of Indium Sulfide by Doping
M. Mathew, St. Joseph College, Kozhikode, India
3BV.1.15 Improving Light Absorption in Cu2ZnSn(S,Se)4 Solar Cells by Down-Shifting Quantum Dot Layer
W.-L. Jeong, GIST, Gwangju, Korea, Republic of
3BV.1.16 Optimization of Sodium and Zinc Composition of a Flexible CZTSSe on Molybdenum Foil for High Photoconversion Efficiency
K. Kim, GIST, Gwangju, Korea, Republic of
3BV.1.17 Experimental Study on Band Gap Discrepancies of Sputtered Cu2ZnSn(S,Se)4 Thin Films: Using Different Characterization Techniques
G. Siddharth, IIT, Indore, India
3BV.1.18 Bias Dependent Reversibility of Degradation of CIGS Solar Cells under Damp Heat and Illumination
M. Theelen, TNO/Solliance, Eindhoven, Netherlands
3BV.1.19 Investigations of Accelerated In-Line CIGS Co-Evaporation
R. Hünig, ZSW, Stuttgart, Germany
3BV.1.21 Influence of Copper Thickness on the Defects Formation in CdTe Solar Cells
E. Artegiani, University of Verona, Verona, Italy
3BV.1.22 Influence of Doping Density on the Back Contact of Cu(In,Ga)Se2 Solar Cells
D. Mücke, Ulm University of Applied Sciences, Ulm, Germany
3BV.1.23 The Investigation of the Effect of Copper Content on the Kinetics of Microwave Photoconductivity in CIGS Solid Solution
G.F. Novikov, RAS, Chernogolovka, Russian Federation
3BV.1.24 Improved Photovoltaic Parameters in CdTe Solar Cells by Insertion of a i-CdO Layer
Al. Qassem Amjad, Moldova State University, Chisinau, Moldova
3BV.1.25 Investigating and Improving Performance Ratio of Cu(In,Ga)(S,Se)2 Photovoltaic Devices
A. Weber, Avancis, Munich, Germany
3BV.1.26 Thinner Front and Reflective Rear Contact for Increased Light Conversion of CIGS Solar Cells on Flexible Substrates
R. Hertwig, EMPA, Dubendorf, Switzerland
3BV.1.28 Metallization Grid on Azo by Electrodeposition of Copper
A. Lachowicz, CSEM, Neuchâtel, Switzerland
3BV.1.30 Improved Performance of Sputtered Cu2ZnSnSe4 Solar Cell by Ge Doping Strategy
M. He, UNSW Australia, Sydney, Australia
3BV.1.31 Synthesis and Study of Loss Kinetics of Photogenerated Current Carriers in Cu2ZnSn(SхSe1-х)4 Solid Solutions
V.F. Gremenok, NASB, Minsk, Belarus
3BV.1.32 Effect of Ag Alloying on Band Offsets, Grading, and Alkali Incorporation in CIGS Solar Cells
K. Sopiha, Uppsala University, Uppsala, Sweden
3BV.1.34 Spatial Atomic Layer Deposition (SALD) Studies for Buffer and Window Layers in CIGS Solar Cells towards in-Line Manufacturing Technologies
M. Balestrieri, CNRS, Palaiseau, France
3BV.1.35 Optical and Electrical Design of ZnO Nanorod-Based CdTe Solar Cells with CdS and MgxZn1-xO Buffer Layers
C. Özcan, METU, Ankara, Turkey
3BV.1.36 Wide Band Gap CuGaSe2 Solar Cells for Tandem Application
D. Lincot, CNRS, Palaiseau, France
3BV.1.37 Cu2SnS3 Thin Films Using Chelating Effect of Hybrid Ink
A. Cho, KIER, Daejeon, Korea, Republic of
3BV.1.38 Investigations and Performance Optimisation of Windowless CdTe:Se/CdTe Solar Cells
B. Späth, CTF Solar, Dresden, Germany
3BV.1.39 Analysis of Growth Mechanism in Ga-Rich Cu(In,Ga)Se2 Thin Films
K. Nakada, Tokyo Institute of Technology, Tokyo, Japan
3BV.1.40 Atomic Layer Deposition of Highly Stoichiometric Cu2SnS3 Films as Absorber Materials for Photovoltaic Applications
R.E. Agbenyeke, KRICT, Daejeon, Korea, Republic of
3BV.1.42 Comparison of Light Induced Metastabilities on Different Thin Film Technologies
A. Mittal, AIT, Vienna, Austria
3BV.1.44 Aluminum Based Back Reflectors for Ultrathin Cu(In,Ga)Se2 Solar Cells with ITO Diffusion Barrier
T. Schneider, Martin Luther University, Halle (Saale), Germany
3BV.1.46 High Speed MOVPE for InGaP/GaAs Multijunction Solar Cells
H. Sodabanlu, University of Tokyo, Tokyo, Japan
3BV.1.48 Analysis of Spatial Inhomogeneity in Multi-Junction Solar Cells Using Transport Efficiency Mapping
H. Xu, University of Tokyo, Tokyo, Japan
3BV.1.49 Roll-Based Transfer Process of Flexible Multi-Junction Solar Cells for Mobile Applications
K.-S. Kim, KIMM, Daejeon, Korea, Republic of
3BV.1.50 Optimization of Ion Beam Sputtered Ta2O5 Anti-Reflective Coatings for III-V Multi-Junction Solar Cells
J. Reuna, Tampere University, Tampere, Finland
3BV.1.51 Development of Inverted-Growth 3-Junction Solar Cells with 1.0 eV Bulk GaAsBi Bottom Cell
T. Paulauskas, Center for Physical Sciences and Technology, Vilnius, Lithuania
3BV.1.52 Optical in situ Quantification of the As versus P Content during GaAsP Graded Layer Growth for III-V-on-Si Tandems
T. Hannappel, Ilmenau University of Technology, Ilmenau, Germany
3BV.1.53 Characterization and Pseudo-3D Modeling of GaSb Solar Cells for High Concentration Photovoltaics
J. Kret, University of Montpellier II, Montpellier, France
3BV.1.54 MOCVD Grown InGaAsP-Based Single Junction Solar Cells with Bandgap-Voltage Offsets Ap-proaching Radiative-Recombination-Only Limit
X. Li, State Key Lab of Space Powersources, Shanghai, China
3BV.1.55 Multijuction Solar Cell Electroluminescence: Method for Subcells IV-Curve Obtaining
M.A. Mintairov, RAS / Ioffe, St. Petersburg, Russian Federation
3BV.1.56 Ultrafast Carrier Dynamics in InGaP/InGaAs/Ge Multi-Junction Solar Cells
V. Paraskeva, University of Cyprus, Nicosia, Cyprus
3BV.1.57 New Results on SiGeSn MOVPE Grown for Multi-Junction Solar Cells
G. Timò, RSE, Piacenza, Italy
3BV.1.60 Influence of Temperature on Evolution of Properties of Ammonia-Free Chemical Bath Deposited CdS Thin Films
I. Gupta, Thapar University, Patiala, India
3BV.1.61 A Facile Route for Synthesis of Copper Iron Tin Sulfide Thin Films
A. El Kissani, Cadi Ayyad University, Marrakech, Morocco
3BV.1.62 High Fill Factor CIGS Solar Modules by Evaporated Metal Grid: Numerical Simulation and Module Validation
S. Lin, NICE, Beijing, China
3BV.1.63 Bifacial and Flexible CIGS Solar Cell by Mechanical Lift-Off Process
T. Masuda, Toyota, Susono, Japan
3BV.1.64 Alternative Buffer Layer for Reducing Optical Losses in Cu(In,Ga)(Se,S)2 Solar Cells
R. Kamada, Idemitsu Kosan, Atsugi, Japan