EU PVSEC Programme Online
35th EU PVSEC 2018, 24 - 28 September 2018, Brussels
Session: 2DV.3 Thin Film and Foil-Based Si Solar Cells/Characterisation & Simulation Methods for Si Cells/Manufacturing & Production of Si Cell
Type: Visual
Date: Thursday, 27th September 2018
17:00 - 18:30
Location / Room: SQUARE - Brussels Meeting Centre Level -2 / Grand Hall
Chairperson(s): G.J.M. Janssen, ECN part of TNO, Petten, Netherlands
M. Topic, University of Ljubljana, Ljubljana, Slovenia
Event: Conference Conference
Type(s) of Access:  Conference Registration
Topic: 2. Silicon Cells
Presentations:
2DV.3.1 Homogeneous Deposition of High Purity Silicon Thin Films with Highest Rates above 30  µm/min
S. Saager, Fraunhofer FEP, Dresden, Germany
2DV.3.2 Large Area Deposition of P, I and N Single Layer of Amorphous Silicon Thin Films Solar Cells Prepared by PECVD
K. Belrhiti Alaoui, IRESEN, Rabat, Morocco
2DV.3.3 High-Performing Photonic-Structured ARCs Enabling Pronounced Efficiency Enhancement in a-Si Thin Film Solar Cells
H. Águas, New University of Lisbon, Caparica, Portugal
2DV.3.4 Structural Study of Nickel Silicide Formation Using Ni/a-Si/c-Si and a-Si/Ni/a-Si/c-Si Multilayers Prepared by RF Sputtering for Photovoltaic Application
A. Agdad, Cadi Ayyad University, Marrakech, Morocco
2DV.3.5 PEDOT:PSS Window Layer for a-Si:H Thin Film Solar Cells on Flexible Substrates
Y. Lee, Korea Aerospace University, Goyang, Korea, Republic of
2DV.3.6 Optimizing the Transparent Electrode Structure in a-Si:H Solar Cells for Low Angular Dependence of Incident Light for BIPV Windows
G. Kim, ETRI, Daejeon, Korea, Republic of
2DV.3.7 Enhanced Efficiency of Crystalline Si Solar Cells Based on Kerfless-Thin Wafers with Nanohole Arrays
I. Kim, KIST, Seoul, Korea, Republic of
2DV.3.8 Study on Bowing Phenomenon According to Thickness of Front/Back-Side Electrode of Thin C-Si Solar Cell
J.-R. Lim, KIER, Daejeon, Korea, Republic of
2DV.3.13 Validity Analysis of the Text Book Lumped Series Resistance Approach for Solar Cells
A.S.H. van der Heide, imec, Genk, Belgium
2DV.3.15 Cross-Sectional Workfunction Measurements on Solar Cell Structures under Light-Controlled Conditions
I. Kamiya, Toyota Technological Institute, Nagoya, Japan
2DV.3.18 Theoretical Simulation of Carbon Nanotubes – Amorphous Silicon Hybrid Solar Cells
H. Meddeb, DLR, Oldenburg, Germany
2DV.3.19 Fundamental and Technological Limits to Low-Light Efficiency of Crystalline Silicon Solar Cells
B. Conrad, CTU, Prague, Czech Republic
2DV.3.20 Silicon Failure under Complex Loadings
M. Fourmeau, INSA Lyon, Villeurbanne, France
2DV.3.21 Series Resistance Breakdown of Silicon Heterojunction Solar Cells Produced on CEA-INES Pilot Line
D. Muñoz, CEA, Le Bourget du Lac, France
2DV.3.22 A New Analysing Approach for Periodically Textured c-Si Solar Cells
H.E. Çiftpinar, METU, Ankara, Turkey
2DV.3.23 Electrical and Optical Characterization of e-Beam Evaporated Poly-Si Films as an Alternative Emitter Layer for Solar Cell Applications
S.H. Sedani, METU, Ankara, Turkey
2DV.3.24 Evaluation of the Lateral Uniformity of Solar Simulator Light Fields
M. Turek, Fraunhofer CSP, Halle (Saale), Germany
2DV.3.25 Simulations of Optimal Solar Cell Architecture and Material Parameters for Silicon Heterojunction Cells on Quasi-Mono Substrate: Strategies for Obtaining Efficiencies over 20%
Y. Smirnov, University of Twente, Enschede, Netherlands
2DV.3.26 Physical Device Simulation of Dopant-Free Silicon Solar Cell Based on Hole-Selective Molybdenum Oxide and Electron-Selective Titanium Oxide
R. Turan, METU, Ankara, Turkey
2DV.3.27 Inline Wafer Identification Using Optical Character Recognition (OCR)
S. Al-Hajjawi, Fraunhofer ISE, Freiburg, Germany
2DV.3.28 Optical and Electrical Behaviour of Dislocations in Monolike Silicon Solar Cells
D. Ory, EDF R&D, Palaiseau, France et al.
2DV.3.29 Image Recognition of Etch Pits on As-Sliced Surface of Multicrystalline Silicon Using Machine Learning
T. Kojima, Meiji University, Kawasaki, Japan
2DV.3.30 Spectral Optical Characteristics of Silicon Nanowire System: Simulative Prediction Followed by Experiments
M.K. Hossain, KFUPM, Dhahran, Saudi Arabia
2DV.3.31 Study of Amorphous Incubation Layer Inhibition in n and p Doped µc-Si:H Thin Films by Optical Methods and Electron Microscopy
F.E. Rojas Tarazona, Pontifical Xavierian University, Bogotá, Colombia
2DV.3.32 Application of Genetic Algorithm Parameter Optimization on Current-Voltage Data Multi-Crystalline Silicon Solar Cells
R.M. Dix-Peek, Nelson Mandela University, Port Elizabeth, South Africa
2DV.3.33 Silver Nanoparticles on Substrate and Superstrate: Fabrication and Numerical Analysis for Solar Cell Applications
M.K. Hossain, KFUPM, Dhahran, Saudi Arabia
2DV.3.34 Spectral Characterization of Temperature Increase in Crystalline Silicon Solar Cells
J. Bengoechea, CENER, Navarra, Spain
2DV.3.36 Electroluminescence Imaging and Light Beam Induced Current as Characterization Techniques of Multi-Crystalline Si Solar Cells
L.A. Sánchez, UVa, Valladolid, Spain
2DV.3.38 IV-Measurements of Bifacial Solar Cells in an Inline Solar Simulator with Double-Sided Illumination
A. Krieg, Fraunhofer ISE, Freiburg, Germany
2DV.3.39 An Examination into the Optical Coupling between Light Funnel Arrays and Underlying Substrates
A. Prajapati, BGU, Beer-Sheva, Israel
2DV.3.40 Efficient Light Trapping with Light Funnel Arrays
A. Prajapati, BGU, Beer-Sheva, Israel
2DV.3.43 GÜNAM Photovoltaic Line (GPVL) - A Pilot Research Line for PERC/PERL/PERT Concepts
E. Semiz, METU, Ankara, Turkey
2DV.3.44 Over 22.0% Efficiency for the p-Type Mono Silicon PERC Solar Cells by Industrial Mass Production Technology
C.-W. Kuo, TSEC, Hsinchu, Taiwan
2DV.3.45 Optimization of Rear Pattern for p-Type Mono Bifacial PERC Cells in Mass Production
H. Li, Dongfang Huansheng Photovoltaic, Yixing, China
2DV.3.46 82% Bifaciality Industrial p-Type mc-Si Bifacial PERC Solar Cell
J. Dong, GCL System Integration Technology, Suzhou, China
2DV.3.48 Magnetron Sputtered TCO-Layers for Industrial Production of Heterojunction Silicon Solar Cells
R. Korn, Singulus Technologies, Kahl am Main, Germany
2DV.3.49 Atmospheric Pressure Chemical Vapor Deposition of In-Situ Doped Amorphous Silicon Layers for Passivating Contacts
A. Merkle, ISFH, Emmerthal, Germany
2DV.3.50 Printed Dopant Sources for Locally-Doped SiOx/Poly-Si Passivating Contacts
Z. Kiaee, Fraunhofer ISE, Freiburg, Germany
2DV.3.51 19.2% Efficiency of Industrial Multi-Crystalline Silicon Solar Cell with MCCE Textured
H. Wang, Yingli Green Energy, Baoding, China
2DV.3.52 Metal-Free Texturing for Diamond-Wire-Sawn Multi-Crystalline Silicon (DWS-mc)
C. Schmitt, RENA, Freiburg, Germany
2DV.3.53 MCCE Textured Multicrystalline and Monocrystalline Silicon Solar Cells
W. Jooss, RCT-Solutions, Konstanz, Germany
2DV.3.54 Anisotropic Etching of Monocrystalline Silicon Wafer without Formation of Hydrogen
A. Stapf, Freiberg University of Technology, Freiberg, Germany
2DV.3.55 Improvement of Emitter Characterization for Industrial PERC Solar Cell
C.-S. Park, Shinsung Solar Energy, Chungcheongbuk-do, Korea, Republic of
2DV.3.56 Phosphorus and Boron Co-Diffusion in Silicon for p-PERT Solar Cells Application
N. Khelifati, CRTSE, Algiers, Algeria
2DV.3.57 Gentle and Damage Free Ablation of Dielectric Layers Using a Femtosecond Laser Source for High Efficiency Silicon Wafer Solar Cells
J.M. Yacob Ali, SERIS, Singapore, Singapore
2DV.3.58 Improvement of Solar Cell Efficiencies for Ultrashort-Pulse Laser Contact Opening with Ni-Cu Plated Contacts by Optimized LCO-FFO Processing Order
V. Arya, Fraunhofer ISE, Freiburg, Germany
2DV.3.59 Low Temperature Silver-Copper Paste Printed on Bus-Bar Electrodes of Passivated Emitter and Rear Cell
C.-H. Chen, ITRI, Hsinchu, Taiwan
2DV.3.61 PVD Metallization for High-Efficiency c-Si Solar Cells: Scenario for Implementation in Production
A. Hain, Singulus Technologies, Kahl am Main, Germany
2DV.3.62 Deep Learning Approach to Inline Quality Rating and Mapping of Multi-Crystalline Si-Wafers
M. Demant, Fraunhofer ISE, Freiburg, Germany
2DV.3.64 Temperature Dependence and Low Light Performance of Various Types of Silicon Solar Cells
Y.Y. Hu, Trina Solar Energy, Changzhou, China
2DV.3.65 Screen Printed Thick Film Metallization of Silicon Solar Cells - Recent Developments and Future Perspectives
A. Lorenz, Fraunhofer ISE, Freiburg, Germany
2DV.3.66 Results of the Project “AdmMo” – Cell and Module Development towards a 318 W Module
J.-F. Nekarda, Fraunhofer ISE, Freiburg, Germany
2DV.3.68 335W Heterojunction Record Module with Smart Wire Cell Technology
A. Waltinger, Meyer Burger, Hohenstein-Ernstthal, Germany
2DV.3.69 Mass Production of Ga-Doped p-Type Cz-Silicon PERC Solar Cells Approaching 21.6% Efficiency
H. Yang, Xi'an Jiaotong University, Xi'an, China
2DV.3.70 Towards the Mass Production of High Efficiency Passivated Contacts n-Type PERT Solar Cells
B. Martel, CEA, Le Bourget du Lac, France
2DV.3.71 Industrial Solutions to Mitigate Light-Induced Degradation in mc-PERC Cells and Modules
J. Wu, Canadian Solar, Suzhou, China
2DV.3.72 High-Efficiency Diamond Wire-Sawn mc-Si-Based PERC Solar Cells Textured by Atmospheric Pressure Dry Etching
B. Kafle, Fraunhofer ISE, Freiburg, Germany et al.