EU PVSEC Programme Online
35th EU PVSEC 2018, 24 - 28 September 2018, Brussels
Session: 3BV.2 CI(G)S, CdTe and Related Thin Film Solar Cells and Modules
Type: Visual
Date: Tuesday, 25th September 2018
13:30 - 15:00
Location / Room: SQUARE - Brussels Meeting Centre Level -2 / Grand Hall
Chairperson(s): A.N. Tiwari, EMPA, Dübendorf, Switzerland
A. Redinger, University of Luxembourg, Luxembourg, Luxembourg
Event: Conference Conference
Type(s) of Access:  Conference Registration
Topic: 3. Non Silicon-Based Thin Film Photovoltaics
3BV.2.2 Elucidation of Mechanism behind the Performance Improvement in Nanoparticle Based CISe Solar Cells upon Na Addition
S.J. Ahn, KIER, Daejeon, Korea, Republic of
3BV.2.3 High-Speed Shunt-Free Laser Scribing and Back-End Interconnection Technology for CIGS Module Production
H. Linden, Solliance Solar Research, Eindhoven, Netherlands
3BV.2.4 CuInSe2 Formation from Electroplated Metallic Layers Using Continuous-Wave Laser Annealing
P. Arnou, University of Luxembourg, Belvaux, Luxembourg
3BV.2.6 Investigation on Sb-Doped Induced Cu(InGa)Se2 Films Grain Growth by Sputtering Process with Se-Free Annealing
D.-M. Zhuang, Tsinghua University, Beijing, China
3BV.2.7 Effect of Electrolytic Bath Stirring on Optical, Morphological and Compositional Properties of CdS Thin Film
F.B. Dejene, University of the Free State, Phuthaditjhaba, South Africa
3BV.2.8 Investigation of High-Quality CBD-Zn(S,O,OH) Buffer Layer on CIGS-Absorbers
A. Cho, KIER, Daejeon, Korea, Republic of
3BV.2.9 Molybdenum Bilayer Thin Film on Large Area by Cylindrical Rotating DC Magnetron Sputtering for CIGS Solar Cell Application
S.R. Dhage, ARCI, Hyderabad, India
3BV.2.10 P2 Nanosecond Laser Patterning of CIGSe Solar Cell Absorber Layers: Revealing Enhanced Charge Carrier Recombination within Laser-Affected Zones by Time-Resolved Photoluminescence Spectroscopy
C. Schultz, HTW Berlin, Berlin, Germany
3BV.2.12 Engineering of Band Alignment at the CuInSe2/In2S3 Interface of the CIGS-Based Thin Film Solar Cells
E. Ghorbani, Technical University of Darmstadt, Darmstadt, Germany
3BV.2.13 Co-Optimized CdS Buffer and Gallium Profile toward High-Efficiency Penternary Cu(In,Ga)(Se,S)2 Solar Cell
P. Parashar, NCTU, Hsinchu, Taiwan
3BV.2.14 Photovoltaic Glazing from Bottom-Up Electrodeposition of CIGS on Patterned Mo/Glass Substrates
D. Lincot, CNRS, Palaiseau, France
3BV.2.15 Alkali Reactivity on Aged CIGS Absorber Deposited on Flexible Substrates Studied by XPS
S. Béchu, IPVF, Palaiseau, France
3BV.2.16 A Study of the Long-Term Effects of Alkali Atom Inclusion on CIGS Solar Cells
T. Kohl, Hasselt University, Diepenbeek, Belgium
3BV.2.17 Stability of CIGS Solar Cells under Illumination with Damp Heat and Dry Heat: A Comparison
M. Theelen, TNO, Eindhoven, Netherlands
3BV.2.18 Assessment of CIGS Device Processing on Innovative Insulating Non-Glass Substrates
F. Kessler, ZSW, Stuttgart, Germany
3BV.2.19 3D-Imaging of Cu(In,Ga)Se2 Grain Boundaries by Time-of-Flight-Secondary Ion Mass Spectrometry
W. Hempel, ZSW, Stuttgart, Germany
3BV.2.20 Systematic Studies on Characteristics of CIGS Absorbers Grown on Flexible PI/Mo Substrate under Different Processing Temperature
I. Jeong, KIER, Daejeon, Korea, Republic of
3BV.2.21 Molybdenum Back Contact Engineering Using Ultrathin Intermediate Layers for Solution Processed Cu2(Zn,Cd)SnS4 Solar Cells
S. Zhuk, NTU, Singapore, Singapore
3BV.2.22 Characterization of Sputtered CdSexTe1-x Films and Their Application in CdTe Solar Cells
C.X. Li, Sichuan University, Chengdu, China
3BV.2.25 Efficiency Improvement of CdTe Solar Cells with Ultra-Thin CdS Layer
E. Artegiani, University of Verona, Verona, Italy
3BV.2.26 In Situ Gel Formation of High-Quality Kesterite Thin Films
S. Binetti, University of Milan, Milan, Italy
3BV.2.27 Effect of Annealing Condition on Formation of Cu2ZnSnS4 Thin Films Using CS2
K. Yoshikawa, Kansai University, Osaka, Japan
3BV.2.28 High Performance Cu-Zn-Sn-Se Thin Film Solar Cells Fabricated by Sputtering Quaternary Compound Target Method
M. Zhao, Tsinghua University, Beijing, China
3BV.2.29 Partial and Total Substitution of Zn by Mg in the Cu2ZnSnS4 Structure
D.M. Mena Romero, UNAM, Querétaro, Mexico
3BV.2.31 Impedance Spectroscopy of CdTe PV Modules - Comparative Study
T. Finsterle, Czech Technical University of Prague, Prague, Czech Republic
3BV.2.32 Effect of Temperature Profile on the Formation of CZTSe Absorber Layer
U.P. Singh, KIIT University, Bhubaneswar, India
3BV.2.34 Effect of Temperature on CZTS Based Thin Film Solar Cell Performance
M. Rahman, BRAC University, Dhaka, Bangladesh
3BV.2.35 Stoichiometry Evaluation in the Partial and Total Substitution of Zn by Mg in the Cu2ZnSnS4 Structure by XRD
C.L. Azanza Ricardo, UNAM, Querétaro, Mexico
3BV.2.36 Fabrication of p-Type Na Doped SrCuSeF and n-Type ITO Bilayer Ohmic Tunnel Junction and Its Application to the Back Contact of CdS/CdTe Solar Cells
T. Wada, Ryukoku University, Otsu, Japan
3BV.2.37 Effect of the Chemical Composition Ratio Cu/(Zn+Sn) and Cu/Zn onto the Structural, Morphological, and Optical Properties of Cu2ZnSnS4 (CZTS) Thin Films for PV Applications
K. Abouabassi, University of IBN ZOHR, Agadir, Morocco
3BV.2.39 Visually Attractive and Flexible Cigs Solar Cell by Lift-Off Process with Automotive Painting
T. Masuda, Toyota, Susono, Japan
3BV.2.40 Cu(In,Ga)Se2 Mini-Modules with High-Mobility In2O3:W,H Transparent Conducting Oxide Layers
T. Koida, AIST, Tsukuba, Japan
3BV.2.41 CIGS Solar Cell with above 19% Cell Efficiency with Na Only PDT Process
S.T. Kim, KAIST, Daejeon, Korea, Republic of et al.