EU PVSEC Programme Online
35th EU PVSEC 2018, 24 - 28 September 2018, Brussels
Session: 2AV.3 Heterojunction Solar Cells
Type: Visual
Date: Monday, 24th September 2018
17:00 - 18:30
Location / Room: SQUARE - Brussels Meeting Centre Level -2 / Grand Hall
Chairperson(s): Y. Ohshita, Toyota Technological Institute, Nagoya, Japan
J. Horzel, CSEM, Neuchâtel, Switzerland
Event: Conference Conference
Type(s) of Access:  Conference Registration
Topic: 2. Silicon Cells
Presentations:
2AV.3.1 Efficiency Improvement of CuI-Si Solar Cells through Progress in Hole Selective Layer Quality
S. Hwang, Sungkyunkwan University, Suwon, Korea, Republic of
2AV.3.2 Nano-Rod Antireflection Hf-Doped In2O3 Films and its Application to Silicon Heterojunction Solar Cells
G.H. Wang, CAS, Beijing, China
2AV.3.3 Stacks of a-SiOx:H/a-Si:H Passivation Layer for Low Parasitic Absorption and High Passivation in Silicon Heterojunction Solar Cells
K. Gotoh, Nagoya University, Nagoya, Japan
2AV.3.5 Development of Silicon-Oxide Layer (SiOx:H) for High-Performance Silicon Heterojunction Solar Cells under Hot and Sunny Environment
A.A. Abdallah, QEERI, Doha, Qatar
2AV.3.7 Different p-Type Silicon Front Emitters for Si Heterojunction Solar Cells
P. Delli Veneri, ENEA, Portici, Italy
2AV.3.8 Transparent MoOx and SiOx Window Layers for Heterojunction Silicon Solar Cells
M. Tucci, ENEA, Rome, Italy
2AV.3.9 Temperature Effects on Sputtered ITO
M. Tucci, ENEA, Rome, Italy
2AV.3.10 Crystallinity and Profilometry of Thin Silicon Films on Rough Substrates by Raman Spectroscopy
A. Fejfar, ASCR, Prague, Czech Republic
2AV.3.12 Rear Device Architectures for Evaluating Passivated Organic/Silicon Hybrid Cells
J. Hack, University of Delaware, Newark, USA
2AV.3.13 Recent Progress in Front/Back Contacted c-Si Heterojunction Solar Cells Using nc-SiOx:H Layers
O. Isabella, Delft University of Technology, Delft, Netherlands
2AV.3.14 Electron Selective Contacts Based on Al2O3/TiO2/ZnO Stacks for Crystalline Silicon Solar Cells
I. Martín, UPC, Barcelona, Spain
2AV.3.15 Amorphous Silicon-Free Metal-Oxides Based Carrier-Selective Contacts to Crystalline Silicon Solar Cells
S. Patwardhan, IIT Bombay, Mumbai, India
2AV.3.16 Enhanced Pasivation Quality of Crystallized Doped Amorphous Silicon Layer with Wet Chemical Oxide
A.E. Aytaç, METU, Ankara, Turkey
2AV.3.17 Contactless Investigation of the p-Type Doping Concentration Level of Single Micrometric Size GaAs Crystals Grown on Silicon for Multijunction Solar Cells
A. Jaffré, CNRS, Gif-sur-Yvette, France
2AV.3.18 Comparison between Amorphous Silicon Layers Deposited for Heterojunction Solar Cells at 13.56 MHz and 140 MHz Excitation Frequency
C. Strobel, Dresden University of Technology, Dresden, Germany
2AV.3.19 Black Silicon with Tunnel Oxide Passivated Contacts
B. Iandolo, Technical University of Denmark, Kongens Lyngby, Denmark
2AV.3.20 Approach for Developing Amorphous Silicon Passivation Layers and p-Type Microcrystalline Layers for Highly Efficient HIT Solar Cells Using a Dynamic VHF-PECVD Process with High Deposition Rates
S. Leszczynski, Technical University of Dresden, Dresden, Germany
2AV.3.21 Deposition of Intrinsic Amorphous Silicon Layers for Heterojunction Solar Cells by Hot-Wire CVD (HWCVD)
M. Justianto, Fraunhofer IST, Braunschweig, Germany
2AV.3.22 From Wafers, to Modules, to Mass Production: Solving All Bottlenecks in Silicon Heterojunction Technology
C. Ballif, EPFL, Neuchâtel, Switzerland
2AV.3.23 4-Terminal and 2-Terminal Tandem Modules in Bifacial Operation: Model Analysis and Comparison
L.J. Geerligs, ECN part of TNO, Petten, Netherlands
2AV.3.24 Silicon Heterojunction IBC Process Simplification: Implementation of Novel “Nano-Envelope” in Situ Dry Clean with Efficiencies above 22.5%
H. Sivaramakrishnan Radhakrishnan, imec, Leuven, Belgium
2AV.3.25 Optimization of Silicon Heterojunction Cells: A Recipe for More Than 26% Efficiency
M.Y. Ghannam, Kuwait University, Safat, Kuwait
2AV.3.26 Ultra-Thin Tunneling SiOx and AlOx Passivating Layers for MoOx Based Selective Hole Contacts
M. Ah Sen, ECN, Petten, Netherlands
2AV.3.27 Composition-Dependent Hydrogen Effusion and Diffusion Mechanism within a-SiNx:H
S. Jafari, Fraunhofer CSP, Halle (Saale), Germany
2AV.3.28 A Transition to Thinner Si Wafers at HJT Mass Production: Ahead of ITRPV Schedule
D. Andronikov, R&D Center TFTE, St. Petersburg, Russian Federation
2AV.3.29 Study of Changes in Intrinsic a-Si:H Passivation Layer Induced by the Growth of n-Doped Nanocrystalline Layer
H. Meddeb, DLR, Oldenburg, Germany
2AV.3.30 Improvement of Nanocrystalline Doped Layer Properties with Argon and Hydrogen Plasma Treatments
H. Meddeb, DLR, Oldenburg, Germany
2AV.3.31 Fabrication and Analysis of Silicon Surface Texturing at Various Coverage Ratios for Improved Solar Cell Performance
N. Avishan, METU, Ankara, Turkey
2AV.3.32 Front/Back Poly-Si/SiO2 Passivated Contact Device with Voc > 720 mV
D.L. Young, NREL, Golden, USA
2AV.3.33 Ultimate Behavior of an Al2O3 Interlayer in a Directly Grown Multilayer Graphene-Silicon Schottky Junction Solar Cell
M.A. Rehman, Sejong University, Seoul, Korea, Republic of
2AV.3.34 Investigating Different Polymeric Systems for Heterojunction Screen Printing Technology
S. LaPlante, Heraeus, West Conshohocken, USA et al.
2AV.3.35 Poly-Si and SiO2 Passivation Contact on Front and Rear Sides of Si Solar Cell with 22% Efficiency
C.-J. Huang, ITRI, Hsinchu, Taiwan
2AV.3.36 Effects of Flow Ratio and Annealing Temperature on Passivation Contacts
C.-J. Huang, ITRI, Hsinchu, Taiwan
2AV.3.37 Newly Developed Ag Coated Cu Paste for Si Hetero-Junction Solar Cell
K. Nakamura, Toyota Technological Institute, Nagoya, Japan