EU PVSEC Programme Online
35th EU PVSEC 2018, 24 - 28 September 2018, Brussels
Session: 2AV.2 Homojunction Solar Cells
Type: Visual
Date: Monday, 24th September 2018
15:15 - 16:45
Location / Room: SQUARE - Brussels Meeting Centre Level -2 / Grand Hall
Chairperson(s): A.W. Weeber, ECN part of TNO, Petten, Netherlands
G. Hahn, University of Konstanz, Konstanz, Germany
Event: Conference Conference
Type(s) of Access:  Conference Registration
Topic: 2. Silicon Cells
2AV.2.1 Passivation of Black Silicon Solar Cells
D.V. Aghabekyan, National Polytechnic University of Armenia, Yerevan, Armenia
2AV.2.2 Dry-Etched Black Silicon: A Cost-Effective Production Route for PERC Solar Cells
M. Serué, Aalto University, Espoo, Finland
2AV.2.3 Optimization of Surface Passivation for Black Silicon Based on Thermal Oxidation
S. Zhang, Talesun Solar, Suzhou, China
2AV.2.4 Industrially MCCE Texutured Cells on Monolike Substrates
Z. Xu, Yingli Green Energy, Baoding, China
2AV.2.5 Industrial Applicability of Antireflection-Coating-Free Black Silicon on PERC Solar Cells and Modules
T.P. Pasanen, Aalto University, Espoo, Finland
2AV.2.6 The Black-SiN Method: A Novel Approach to Reduce the Reflection of Solar Cells
J. Hirsch, Fraunhofer CSP, Halle (Saale), Germany
2AV.2.7 Wet Chemical Surface Finishing for Lithography-Free Inverted Pyramids
E. Donercark, METU, Ankara, Turkey
2AV.2.8 Green Black Silicon Texturing for Multi-Crystalline Silicon Wafer
C.-W. Lan, NTU, Taipei, Taiwan
2AV.2.9 Silicon Wafer Reflection Reduction with Maskless Plasma Etching by CHF3 and H2
A. Okhorzina, Anhalt University of Applied Sciences, Köthen, Germany
2AV.2.10 Electroless-Plated Metallization for Mono- and Bi-Facial n-PERT Solar Cells
Y.-L. Lee, Motech Industries, Tainan, Taiwan
2AV.2.11 Influence of Plating Solution via Wet Process on High Efficiency Silicon Solar Cells
M.-S. Lin, Motech Industries, Tainan, Taiwan
2AV.2.12 Optimization of Boron Doping by BCl3 for n-Type Bifacial c-Si Solar Cell
E. Orhan, METU, Ankara, Turkey
2AV.2.13 Metallization Fraction of Bifacial pSPEER Shingle Solar Cells
M. Al-Akash, Fraunhofer ISE, Freiburg, Germany
2AV.2.14 Novel PERC Solar Cells with Advanced Passivated Multi-Layers
S.-Y. Chen, ITRI, Hsinchu, Taiwan
2AV.2.15 Aluminum/Porous Silicon Combination on Multicrystalline Silicon Nanostructure Passivation for Solar Cells Applications
M. Ben Rabha, CRTEn, Hammam-Lif, Tunisia
2AV.2.16 Modifying the Ratio between Highly and Lightly Doped Emitters for PERC with a Selective Emitter Structure Using Wet Chemical Etch-Back Process
S. Joonwichien, AIST, Koriyama, Japan
2AV.2.18 Boron Autodoped LPCVD Polysilicon as a Surface Passivation and Contact Passivation Layer on the Front-Side of n-PERT Solar Cells
R.C.G. Naber, Tempress, Vaassen, Netherlands
2AV.2.19 Improvement of Pull Strength for Plated Ni/Cu Electrodes on Silicon Solar Cells
K.-C. Lai, Motech Industries, Tainan City, Taiwan
2AV.2.21 Analysis of Doped Poly Si with Tunnel Silicon Oxide for Carrier Selective Solar Cell Application
J. Kang, Hyundai Heavy Industries, Gyeonggi, Korea, Republic of
2AV.2.22 Influence of Oxygen on Formation of Poly-Si Films by Al-Induced Crystallization of SiOx Films
J.-H. Yoon, Kangwon National University, Chuncheon, Korea, Republic of
2AV.2.23 Effect of Light Absorption from Rear Side in Bifacial Interdigitated-Back-Contact (IBC) Crystalline Silicon Solar Cell
T. Tachibana, AIST, Koriyama, Japan
2AV.2.24 X-Ray Photoelectron Spectroscopy (XPS) Study of the Printed-SiOx DL CAP in PERC-Type Solar Cell Application
Y.-C. Lee, National Dong Hwa University, Hualien, Taiwan
2AV.2.26 Application of Boron Doping Paste for Simplified Fabrication of Interdigitated Back Contact Solar Cells
A. Aliefendioğlu, METU, Ankara, Turkey
2AV.2.27 Laser Doping from PSG for Selective FSF of Screen Printed Rear-Junction n-PERT Cells
S. Singh, imec, Leuven, Belgium
2AV.2.28 Screen-Printed Interdigitated Back Contact Silicon Solar Cell: Design, Fabrication, and Analytical Characterization
Y.-W. Peng, NTHU, Hsinchu, Taiwan
2AV.2.29 Bath-Life Time Analysis and Simulation of HF-HCl-Cl2 Batch Processes for Texturing Monocrystalline Silicon Wafers
K. Halbfaß, Freiberg University of Technology, Freiberg, Germany
2AV.2.30 The Impact of Advanced Texturing on Saturation Current Density in n-Type PERT Silicon Solar Cell Processing
J. John, imec, Leuven, Belgium
2AV.2.31 Avoiding Parasitic Plating on Ni/Cu Plated Monocrystalline Silicon Solar Cells by Optimization of Silicon Oxide Etching in Fluoride Media
C. Molto, EDF, Palaiseau, France
2AV.2.32 Characterization of Metal Oxide Barrier Layer in Screen-Printed Cu Paste Electrode / Mono c-Si Solar Cell
T. Saito, Tohoku University, Sendai, Japan
2AV.2.33 Impact of Surface Morphology and Interfacial Oxide Thickness on Passivation Quality of p+ Polysilicon Passivating Contacts
S. Mack, Fraunhofer ISE, Freiburg, Germany
2AV.2.34 WetAlOx: A Novel, Cost Effective, Negative Charge Passivation Method for Crystalline Silicon Solar Cells
E. Schmid, ISC Konstanz, Konstanz, Germany
2AV.2.35 Industrial biPERC Solar Cells with Varied Rear Side Characteristics under Bifacial Illumination
N. Wöhrle, Fraunhofer ISE, Freiburg, Germany
2AV.2.36 In-Situ Photoluminescence Study on Evolution of Passivation Properties during Plasma Exposure
M. Sreng, IPVF, Palaiseau, France
2AV.2.37 Emitter Formation and Passivation Dependence on Crystal Grain Orientations after Atmospheric Pressure Dry Nanotexturing
A.I. Ridoy, Fraunhofer ISE, Freiburg, Germany
2AV.2.38 Optimizing TCO Layers for Novel Bifacial Crystalline Silicon Homojunction Solar Cells Integrating Passivated Contacts
E. Bruhat, CEA, Le Bourget du Lac, France
2AV.2.39 Rear Side Design Optimization and Loss Analysis for n-Type IBC Solar Cells Using Simulation
C. Sasidharan, TERI, New Delhi, India
2AV.2.40 Effect of Laser Parameters on Rear Contact Formation and Passivation of PERC Type Silicon Solar Cells
E. Genç, METU, Ankara, Turkey
2AV.2.41 Investigation on Post Cleanings on Modified Surface Using Laser Texturing
B. Radfar, METU, Ankara, Turkey
2AV.2.42 Evolution of Contact Formation on p-Type Crystalline Silicon Solar Cells
R.W. Mayberry, Heraeus, West Conshohocken, USA
2AV.2.43 Passivation of Crystalline Silicon Surfaces with Ultra-Thin Silicon Nitride Films Formed by Catalytic Chemical Vapor Deposition
K. Ohdaira, JAIST, Ishikawa, Japan
2AV.2.44 Fully Ion-Implanted IBC Silicon Solar Cell with Gap Structure between Emitter and BSF by Self-Aligned Process
K. Tanahashi, AIST, Koriyama, Japan
2AV.2.45 Potential of Chemical Rounding for the Performance Enhancement of a Pyramid-Textured Bifacial Si Bottom Cell
H. Lee, Toyota Technological Institute, Nagoya, Japan
2AV.2.46 Novel Texturisation Approach for Improving the Performance of Diamond Wire Cut Sawn Multi-Crystalline Silicon Wafer
B. Pal, Jadavpur University, Kolkata, India
2AV.2.47 Development of Large Area n-Type Crystalline Silicon Solar Cell by Black Silicon Emitter Surface Having Passivation and Back Surface Field with a-Si:H Layers
S. Ray, IIEST Shibpur, Howrah, India
2AV.2.48 Investigation of c-Si Surface Passivation with ALD Deposited HfO2 Films Annealed in Air
A. Gougam, Masdar Institute, Abu Dhabi, United Arab Emirates
2AV.2.50 Potential-Induced Degradation Leads to the Destruction of the Si/SiNx Interface
C. Zhou, CAS, Beijing, China