EU PVSEC Programme Online
35th EU PVSEC 2018, 24 - 28 September 2018, Brussels
Session: 2AV.1 Feedstock, Crystallisation, Wafering, Defect Engineering
Type: Visual
Date: Monday, 24th September 2018
13:30 - 15:00
Location / Room: SQUARE - Brussels Meeting Centre Level -2 / Grand Hall
Chairperson(s): S. Riepe, Fraunhofer ISE, Freiburg, Germany
O. Anspach, PV Crystalox Solar, Erfurt, Germany
Event: Conference Conference
Type(s) of Access:  Conference Registration
Topic: 2. Silicon Cells
2AV.1.1 Extraction and Characterization of Silicon Extracted from the Padma River Sand Using a Modified-Aluminothermic Process
A.B.M. Ismail, University of Rajshahi, Rajshahi, Bangladesh
2AV.1.2 Study of Metal Impurity Extraction from Silicon
S.M. Karabanov, RSREU, Ryazan, Russian Federation
2AV.1.3 Effects of Magnesium-Doping on Silicon Leaching for Solar Grade Feedstock Production
M. Zhu, NTNU, Trondheim, Norway
2AV.1.4 Phosphorus Removal from Al-Doped Silicon by Vacuum Refining
A. Hoseinpur, NTNU, Trondheim, Norway
2AV.1.5 Performance of Modules and Solar Cells Made of 100% Solar Silicon Purified by Direct Route
E. Forniés, Aurinka PV, Madrid, Spain
2AV.1.6 Effect of Commercially Available SiO2 Diffusion Barriers on the Material Quality of Directionally Solidified High Performance Multi-Crystalline Silicon Ingots
F. Sturm, Fraunhofer IISB, Erlangen, Germany
2AV.1.7 Influencing the Incorporation of Oxygen during the Directional Solidification of Multi-Crystalline Silicon by Adjusting the Silicon Nitride Coating
S. Schwanke, Fraunhofer IISB, Erlangen, Germany
2AV.1.8 Cost Effective Growth of Silicon Mono Ingots by the Application of the Multipulling Technique Combined with Active Crystal Cooling
F. Mosel, PVA Crystal Growing Systems, Wettenberg, Germany
2AV.1.9 Mathematical Modeling of Electromagnetic Stirring of Silicon Melt
S.M. Karabanov, RSREU, Ryazan, Russian Federation
2AV.1.10 Analysis of the Impact of Czochralski Growth Parameters on Silicon Grown-in Defects Formation
M. Jomâa, SINTEF, Oslo, Norway
2AV.1.11 Development of Methods for Reducing the Red-Zone in the Top Region of mc-Silicon Ingots
T. Bähr, Access, Aachen, Germany
2AV.1.12 Evaluation of a New Hybrid Crucible Concept for Crystallization of mc-Silicon Ingots
T. Bähr, Access, Aachen, Germany
2AV.1.13 Influence of Process Parameter on the Bubble Formation in Fused Silica Crucibles during Czochralski Growth of Mono-Crystalline Silicon for Solar Cell Application
I. Kupka, Fraunhofer THM, Freiberg, Germany
2AV.1.14 A Study on the Continuous Casting of High Purity Silicon Ingot Using Numerical Simulation Method
J.-K. Lee, KIER, Daejeon, Korea, Republic of
2AV.1.15 Computer Modeling of a DS Furnace for Multicrystalline Silicon Ingot Growth
A. Mokrani, CRTSE, Algiers, Algeria
2AV.1.16 The Crucible- Si3N4 Coating-Silicon Feedstock Quality Effect on the Electrical Properties of the Directional Solidified Multicrystalline Silicon Ingot
Y. Chettat, CRTSE, Algiers, Algeria
2AV.1.18 Thermal Stress Minimization in Silicon Ribbon Growth Processes by Thermal Gradients Modulation with 808 nm Laser Scanning
D.M. Pera, University of Lisbon, Lisbon, Portugal
2AV.1.19 Eco-Solar Factory: Utilisation of Kerf-Loss from Silicon Wafer Sawing for the Manufacturing of Silicon Nitride Crucibles
M.P. Bellmann, SINTEF, Trondheim, Norway
2AV.1.20 The Impact of Wafer Thickness (210 and 140 Μμm) for Photovoltaic Use on the Fracture Strength
H. Sekhar, AIST, Koriyama, Japan
2AV.1.21 Epitaxial Growth of Silicon by Electron Beam Evaporation Deposition
M. Stange, SINTEF, Oslo, Norway
2AV.1.22 Slurry Sawing of Multicrystalline Silicon with Low-Viscosity Carrier Liquid
T. Kaden, Fraunhofer THM, Freiberg, Germany
2AV.1.23 Study of the Failure Mechanism of Crystalline Silicon: Relation between Crack Orientation and Failure Stress
S. Rodríguez-Conde, UVa, Valladolid, Spain
2AV.1.24 Wafering Performance of Structured Wire in Correlation to the Wire Geometry
R. Köpge, Fraunhofer CSP, Halle (Saale), Germany
2AV.1.29 Lifetime Evolution during Regeneration in Boron-Doped Czochralski-Silicon
D.C. Walter, ISFH, Emmerthal, Germany
2AV.1.30 Defect Analysis of APCVD Gettered Multicrystalline Silicon
M. Fleck, University of Konstanz, Konstanz, Germany
2AV.1.31 Gettering and Passivation of Advanced High Performance Multicrystalline Silicon Material
C. Fischer, University of Konstanz, Konstanz, Germany
2AV.1.32 Thermally Induced Oxygen Related Donor States in Cz-Silicon Studied by Spectral Photoluminescence
E. Olsen, NMBU, Ås, Norway
2AV.1.33 Quantifying the Impact of Grain Boundaries on Standard and High Performance mc-Silicon Solar Cells
A.P. Pacho, Karlstad University, Karlstad, Sweden
2AV.1.34 An Efficient Optimized RTP Process to Minimize Light Induced Degradation Phenomenon and Their Effect on Surface Roughness in p-Type Cz-Si Wafers
D. Bouhafs, CRTSE, Algiers, Algeria
2AV.1.35 The Performance of Cast Mono Wafer, Cell and Module
Z. Xing, Canadian Solar, Suzhou, China