EU PVSEC Programme Online
EU PVSEC 2021, 6 - 10 September 2021
Presentation: 1AO.2.6 BaZrS3 Chalcogenide Perovskite Thin Films by H2S Sulfurization
Type: Oral
Date: Monday, 6th September 2021
15:15 - 16:45
Author(s): J.A. Marquez-Prieto, M. Rusu, H. Hempel, I.Y. Ahmet, M. Kölbach, I. Simsek, L. Choubrac, G. Gurieva, R. Gunder, S. Schorr, T. Unold
Presenter / Speaker: M. Rusu, HZB, Berlin, Germany
Event: Conference Conference
Session: 1AO.2 Innovative Approaches for Solar Cells and Photovoltaic Materials
Topic: 1. 2 New Materials and Concepts for Cells and Modules
Summary / Abstract: Chalcogenide materials with the perovskite-type structure attract interest as potentially stable materials with promising optoelectronic properties for application in photovoltaic devices. Among these materials, BaZrS3 has been found to have a very high absorption coefficient near the band-edge and a band gap close to 2 eV, which makes it a promising candidate for tandem devices with Si or similar low band gap bottom cells. Very little work has been reported on BaZrS3 thin films and, in particular, the electrical and optical properties of BaZrS3 are not well established. The aim of this work is therefore to synthesize BaZrS3 thin films and investigate their electrical and optoelectronic properties.