We investigate how the bulk resistivity affects the performance of silicon solar cells, and how those characteristics impact the reliability of modules. In this study, we manufactured, for the first-time, n-type and p-type silicon heterojunction solar cells with bulk resistivities between 3 Ωcm and 15000 Ωcm. We measured efficiencies over 20% for n-type solar cells across the entire range of bulk resistivities, and we found similar response to different illumination intensities (0.1-1suns). In addition, we submitted the solar cells to light soaking and we determined the breakdown voltage for each bulk resistivity. The p-type solar cells with 1000 Ωcm show to be less sensitive to light induced degradation and solar cells with bulk resistivities of 1000 Ωcm show breakdown voltages close to 1000 V, i.e., almost two orders of magnitude higher than in solar cells with commercial bulk resistivities of 3 Ωcm. Even though the modules have bypass diodes, which prevent the solar cells going into breakdown, solar cells with higher breakdown voltages can contribute to improve the reliability of the modules, reduce the design complexity and cost. Currently, we are finalizing simulations to understand how larger breakdown voltages can benefit the module reliability, the conclusions of which will be reported at the conference.