Silicon solar cells bearing a SiOx-based passivating contact, more commonly known as TOPCon, have shown outstanding results recently [1–4]. This is because of the unique ability of TOPCon to provide excellent surface passivation together with low contact resistance. So far, P-doped TOPCon has shown much better performance than B-doped one, especially with regard to surface passivation. This is because, unlike P, B diffuses heavily through the passivating SiOx layer at the high processing temperatures required for TOPCon, and in the process, damages the passivating SiOx layer. An alternative and rather interesting way to make p-type TOPCon is to employ aluminium-induced crystallization (AIC) of amorphous Si (a-Si), which can be performed at temperatures below 577 °C. This can eliminate the drawbacks of the conventional high-temperature fabrication of B-doped TOPCon. Moreover, AIC results in Al-doped p-type poly-Si, which might obviate the need of using B altogether. A few works on Si solar cells with AIC-based TOPCon are available in the literature, but the device results are quite poor. Besides, no characterization of the contact is reported [6–8].