EU PVSEC Programme Online
EU PVSEC 2021, 6 - 10 September 2021
Presentation: 2DV.3.8 P-Type TOPCon by Aluminium-Induced Crystallization of Amorphous Silicon
Type: Visual
Date: Thursday, 9th September 2021
13:30 - 15:00
Author(s): R. Sharma, J. Szlufcik, H. Sivaramakrishnan Radhakrishnan, J. Poortmans
Presenter / Speaker: R. Sharma, imec, Leuven, Belgium
Event: Conference Conference
Session: 2DV.3 Technologies for High Temperature Passivating Contacts and Homo Junction Silicon Solar Cells / Low Temperature Routes for Silico
Topic: 2. 2 High Temperature Route for Si Cells
Summary / Abstract: Silicon solar cells bearing a SiOx-based passivating contact, more commonly known as TOPCon, have shown outstanding results recently [1–4]. This is because of the unique ability of TOPCon to provide excellent surface passivation together with low contact resistance. So far, P-doped TOPCon has shown much better performance than B-doped one, especially with regard to surface passivation. This is because, unlike P, B diffuses heavily through the passivating SiOx layer at the high processing temperatures required for TOPCon, and in the process, damages the passivating SiOx layer[5]. An alternative and rather interesting way to make p-type TOPCon is to employ aluminium-induced crystallization (AIC) of amorphous Si (a-Si), which can be performed at temperatures below 577 °C. This can eliminate the drawbacks of the conventional high-temperature fabrication of B-doped TOPCon. Moreover, AIC results in Al-doped p-type poly-Si, which might obviate the need of using B altogether. A few works on Si solar cells with AIC-based TOPCon are available in the literature, but the device results are quite poor. Besides, no characterization of the contact is reported [6–8].