EU PVSEC Programme Online
EU PVSEC 2021, 6 - 10 September 2021
Presentation: 2DV.3.1 A Highly Passivating and Electron-Selective SiOx/SiCx Contact for Si Solar Cells Made with Fully Industrial Techniques
Type: Visual
Date: Thursday, 9th September 2021
13:30 - 15:00
Author(s): R. Sharma, A. Alleva, H. Sivaramakrishnan Radhakrishnan, L. Tous, J. Poortmans
Presenter / Speaker: R. Sharma, imec, Leuven, Belgium
Event: Conference Conference
Session: 2DV.3 Technologies for High Temperature Passivating Contacts and Homo Junction Silicon Solar Cells / Low Temperature Routes for Silico
Topic: 2. 2 High Temperature Route for Si Cells
Summary / Abstract: Most futurehigh-efficiency commercial Si solar cells are expected tofeature a full-area polycrystalline Si (poly-Si)/SiOx passivating contactonthe rear side[1]. A lean process for realizingthiscontactrequires single-side poly-Sior amorphous Si (a-Si)deposition. To this end,inline plasma-enhanced chemical vapor deposition (PECVD)is an ideal technique. Not only is it an inherently single-side deposition technique,but it can also be used to deposit highly doped a-Si.In this work, we aim to use inline PECVD to make n-type poly-Si/SiOx contact with screenprinted and fire-through metallization for high-efficiency Si solar cells. Themetallization scheme requires a thick(100 nm or more)poly-Si layer to minimize damage to surface passivation.Thus, at least an equally thick PECVD a-Si layer is required.