Most futurehigh-efficiency commercial Si solar cells are expected tofeature a full-area polycrystalline Si (poly-Si)/SiOx passivating contactonthe rear side. A lean process for realizingthiscontactrequires single-side poly-Sior amorphous Si (a-Si)deposition. To this end,inline plasma-enhanced chemical vapor deposition (PECVD)is an ideal technique. Not only is it an inherently single-side deposition technique,but it can also be used to deposit highly doped a-Si.In this work, we aim to use inline PECVD to make n-type poly-Si/SiOx contact with screenprinted and fire-through metallization for high-efficiency Si solar cells. Themetallization scheme requires a thick(100 nm or more)poly-Si layer to minimize damage to surface passivation.Thus, at least an equally thick PECVD a-Si layer is required.