Si-heterojunctions (HJT) currently hold the world record on light conversion efficiency among Sibased solar cells at 26.6% . High-efficiency technologies such as HJT or tunnel oxide passivating contacts (Topcon) cells rely on using n-type Si with excellent material quality, particularly for HJT solar cells where all processing is performed below 250 °C. Currently, there is a 10% premium cost for n-type Cz wafers compared to p-type wafers, which is at least partially attributed to the strict lifetime constraints placed by solar cell manufacturers onto wafer producers . The silicon wafer price can heavily impact the overall cost of a solar cell, constituting up to 60% of the total photovoltaic cell price. This, along with other factors, results in higher production costs compared to traditional PERC cells based on p-type Si. In this respect, it looks very attractive to try to implement p-type Si wafers in high-efficiency PV cell production achieving maximum possible efficiency, particularly in light of the ever-increasing efficiency of p-type devices, with PERC reaching 24%, highlighting the potential of the material. In addition, methods to solve light-induced degradation are now available.