Luminescence is now a well-recognized method to characterize semi-conductors, and among them solar cells, and has been introduced more than a decade ago . Electroluminescence has become a common way for quality test in production and solar plants but also in laboratories. Many opto-electronic characteristics have been shown to be accessible using electroluminescence, like diffusion length, first by Fuyuki  using a single EL image but also Wurfel  we proposed a ratio of two EL images taken with two different short pass filters. Other authors proposed also method to map the shunts  in cells or extract the dark saturation current  or series resistance maps . Our work  aims at presenting an absolutely calibration method dedicated to luminescence imaging. By modelling the voltage dependent electroluminescence EL(V) we demonstrate how our method allows to extract quantitative maps of diffusion length, dark saturation current, local voltage and series resistance. Our results are compared to other methods and are in good agreement.