In this work we show the integration of polysilicon-based passivating contacts in plated bifacial n-type PERT (Passivated Emitter and Rear Totally diffused) solar cells. We show the viability of n-PERT cells using 2-side passivating contacts with 2-side plated nickel/silver metallization. Best efficiency up to 22.2% has been achieved with these cells so far on large area (244.3 cm2) n-type Cz. Process development for improvement in efficiency towards >24 % is ongoing. One of the steps being undertaken is the reduction in width and thickness of front side boron doped p-poly layers to reduce parasitic absorption. Some of these co-plated bifacial cells have been processed into one cell laminates using smart wire interconnection (SWCT) technology. These have already passed thermal cycling (TC) tests as defined in IEC61215. More cells and laminates will be prepared in the coming period and TC and damp-heat (DH) studies will be performed.