EU PVSEC Programme Online
EU PVSEC 2021, 6 - 10 September 2021
Presentation: 2BO.15.2 On the Interplay between Room-Temperature Sputtered IWO and Underlying Thin Film Silicon Stacks in Silicon Heterojunction Solar Cells
Type: Oral
Date: Tuesday, 7th September 2021
17:00 - 18:30
Author(s): C. Han, Y. Zhao, L. Mazzarella, R. Santbergen, A. Montes, P.A. Procel Moya, G. Yang, M. Zeman, O. Isabella
Presenter / Speaker: C. Han, Delft University of Technology, Delft, Netherlands
Event: Conference Conference
Session: 2BO.15 TCO and Metallisation for Silicon Heterojunction Cells
Topic: 2. 3 Low Temperature Route for Si Cells
Summary / Abstract: The window layers limit the performance of front/back-contacted silicon heterojunction (SHJ) solar cells. Here, we present RF-sputtered tungsten-doped indium oxide (IWO) films at room temperature. The manipulation of the optoelectrical properties of the IWO film when deposited on top of thin-film silicon layer was investigated, with respect to a reference ITO film. With the more realistic transparent conductive oxide (TCO) data that were obtained on thin-film silicon stacks, the optical advantages of IWO-based SHJ cell were analysed both theoretically and experimentally. The IWO-based SHJ devices showed promising optical response in visible-to-near-infrared wavelength range, although the IWO layer presents moderate electron mobility of 46.57 cm2 V-1 s -1 and 42.09 cm2 V-1 s -1 after treated on i/n/glass and i/p/glass substrates. With an additional magnesium fluoride layer on top, our champion IWO-based SHJ device showed an active area cell efficiency of 22.92%, which is an absolute 0.98% efficiency gain compared to the reference ITO-based SHJ device.