EU PVSEC Programme Online
EU PVSEC 2021, 6 - 10 September 2021
Presentation: 3BV.1.5 Study of ALD-Grown SnO2 as an Electron Selective Layer for NIP Perovskite-Based Solar Cells
Type: Visual
Date: Tuesday, 7th September 2021
08:30 - 10:00
Author(s): F. Gayot, E. Bruhat, M. Manceau, E. de Vito, S. Cros
Presenter / Speaker: F. Gayot, CEA, Le Bourget-du-Lac, France
Event: Conference Conference
Session: 3BV.1 Perovskite Solar Cells and Modules
Topic: 3. 1 Perovskites
Keywords: Perovskite, Tandem, ALD, Electron Transport Layer
Summary / Abstract: Numerous challenges remain unresolved to achieve photovoltaic conversion efficiency above 30% for mainstream application by utilization of PK/Si tandem solar cells. For a 2-Terminal (2T) tandem configuration, it is necessary to adapt the perovskite (PK) top-cell to a crystalline silicon (c-Si) bottom-cell, in terms of size and fabrication processes. One adjustment concerns the ESL deposition. Solvent-based processes mainly employed in single-junction PK cells are not appropriate for the top-cell integration in the tandem case, where the c-Si bottom-cell is a large and textured substrate. Among other possibilities, Atomic Layer Deposition (ALD) seems more suitable for such ESL deposition. To this day, few studies report the use of ALD-grown tin oxide (SnO2) as an ESL in NIP PK top-cell for 2T tandems. Aiming at a better understanding on how ESL-PK interaction relates to device performances, the present work investigates SnO2 thin films, then PK films properties and, finally, analyses integration of ALD-grown SnO2 as ESL in single-junction PK cells.