4. 1 PV Module Design, Manufacture, Performance and Reliability
CIGS, Degradation, Shunt Resistance
Summary / Abstract:
For the application of Potential-Induced Degradation detection via dark current-voltage curve measurement, the temperature dependency of electrical module parameters plays a vital role. For the detection of shunting-type PID, the shunt resistance can serve as an indicator. The experiments show that the shunt resistance of Copper-Indium-Gallium-Selenide Thin-Film modules is strongly temperature dependent. In a 90 K range between -10 °C and 85 °C, the shunt resistances of two modules from two different manufacturers both show a negative temperature coefficient over the whole temperature interval. For module A, the shunt resistance changes by a factor of around five and for module B, the factor is around three. The decrease of the shunt resistance with increasing temperature is monotonically decreasing and non-linear for both modules. The correlation between temperature and shunt resistance does not show any hysteresis effect.