This article reports on using direct current (DC) sputter deposition of Si for passivating polysilicon on oxide (POLO) contacts. We measure the doping density in DC-sputtered in-situ n+-type poly-Si layers and study their passivation quality using symmetric lifetime samples. We compare in-situ doped samples with samples that are additionally ex-situ doped by a POCl3 diffusion. The best sputtered and solely in-situ doped sample shows excellent passivation quality with an implied open circuit voltage of 734 mV and a median surface recombination current density of (2.1 ± 0.4) fA/cm² after a hydrogenation step.
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