EU PVSEC Programme Online
EU PVSEC 2021, 6 - 10 September 2021
Presentation: 2BO.11.5 Controlling Doping Density in DC-Sputtered In-Situ Phosphorous-Doped Polysilicon Layers for Passivating Contacts
Type: Oral
Date: Tuesday, 7th September 2021
08:30 - 10:00
Author(s): L. Nasebandt, B. Min, S. Hübner, T. Dippell, P. Wohlfart, R. Peibst, R. Brendel
Presenter / Speaker: L. Nasebandt, ISFH, Emmerthal, Germany
Event: Conference Conference
Session: 2BO.11 Poly-Silicon Passivated Contacts
Topic: 2. 2 High Temperature Route for Si Cells
Keywords: Polycrystalline, Sputtering, Passivation
Summary / Abstract: This article reports on using direct current (DC) sputter deposition of Si for passivating polysilicon on oxide (POLO) contacts. We measure the doping density in DC-sputtered in-situ n+-type poly-Si layers and study their passivation quality using symmetric lifetime samples. We compare in-situ doped samples with samples that are additionally ex-situ doped by a POCl3 diffusion. The best sputtered and solely in-situ doped sample shows excellent passivation quality with an implied open circuit voltage of 734 mV and a median surface recombination current density of (2.1 ± 0.4) fA/cm² after a hydrogenation step.