EU PVSEC Programme Online
EU PVSEC 2021, 6 - 10 September 2021
Presentation: 2BO.12.3 Driven-in RVD Emitters and Adopted TOPCon Layers for Simultaneous Crystallization during RVD
Type: Oral
Date: Tuesday, 7th September 2021
10:30 - 12:00
Author(s): M. Drießen, A. Richter, J.-I. Polzin, F. Feldmann, B. Steinhauser, M. Ohnemus, C. Weiss, J. Benick, S. Janz
Presenter / Speaker: M. Drießen, Fraunhofer ISE, Freiburg, Germany
Event: Conference Conference
Session: 2BO.12 Advanced Process Technologies for High-Efficiency Silicon Solar Cells
Topic: 2. 2 High Temperature Route for Si Cells
Summary / Abstract: Rapid vapour-phase direct doping (RVD) is an appealing alternative emitter formation process with diffusion directly from the gas phase without formation of a silicate glass. The resulting emitter profile depends on the dopant concentration in the gas phase that can be changed during the process which offers e.g. the possibility to apply an in-situ dopant-free drive-in step. For the TOPCon cell concept the RVD process can be used for a simultaneous crystallisation of the amorphous silicon layer. First combined emitter diffusion and TOPCon crystallization experiments resulted in high implied open circuit voltage (iVOC) values of >700 mV for cell precursors [1]. However, corresponding emitter profiles were shallow with high surface concentrations and high sheet resistances. In this contribution a drive-in step in inert atmosphere is applied to the emitter and necessary adaptions of the TOPCon layer are investigated.