Perovskite silicon tandem solar cells are able to use the sun-light spectrum much more efficiently and has the potential to achieve efficiencies above the so-called Auger limit. Therefore, the development of tandem solar cell architectures leading to minimized parasitic absorption losses and the adaption of perovskite as well as silicon sub-cells for current matching is required. For an efficiently matching of these sub-cells the use of several transparent conductive oxide (TCO) layers play a central role for the electron transport and for increasing the electro-optical performance. The properties of the transparent, selective contact layers have to be optimized for reduced series resistivity losses and durability under processing conditions and under outdoor operation. TCOs consist of several layers with different thickness and electric resistivity. Measuring sheet resistance of TCO sublayers and interfacial electrical as well as material properties is a challenge to established industrial measuring devices. Conventional methods for sheet resistance measurements at thin films, like four-point-probing and van der Pauw method, cannot be applied since they require single layers on highly resistive substrates.