Silicon heterojunction (SHJ) is a proven technology for large-scale production of cost-effective high-efficiency photovoltaic modules. With progress in homojunction (PERC) and high-temperature passivating contact technologies, continuous efficiency improvement is still needed for this technology to keep its relevance. Standard SHJ design uses amorphous silicon (a-Si) for both passivation and selective layers, completed by ITO for lateral transport and antireflective coating (ARC). Such design allows baseline efficiency of 23%, in several laboratories and production industry . We propose here a three-level optimizations of the front hole-contact stack to bring SHJ cell efficiency beyond 24% that is easy to integrate in the existing process flow. The sample architecture and the optimization roadmap is shown in Fig.1. The first step is to replace the (p) a-Si layer by nanocrystalline silicon (nc-Si)—and eventually nc-SiO—to improve contact resistance (c) and transparency . Next, replacing ITO with higher-mobility IZrO enables higher transparency and conductivity. Finally, thinning the IZrO layer and capping it with a SiOx layer allows both to boost the transparency and conductivity, while reducing indium consumption.