EU PVSEC Programme Online
EU PVSEC 2020, 7 - 11 September 2020
Presentation: 2CO.14.3 In-Situ Modulated Photoluminescence of Passivated c-Si Wafers during Annealing
Type: Oral
Date: Wednesday, 9th September 2020
15:15 - 16:45
Author(s): A. Desthieux, M. Sreng, E. Drahi, B. Bazer-Bachi, F. Silva, J.-C. Vanel, J. Posada, P. Roca i Cabarrocas
Presenter / Speaker: A. Desthieux, EDF R&D, Palaiseau, France
Event: Conference Conference
Session: 2CO.14 Analysis of Wafers and Layers for Highly Efficient Crystalline Silicon Solar Cells
Type(s) of Access:  Conference Registration
Topic: 2. 5 Characterisation & Simulation of Si Cells
Summary / Abstract: High quality surface passivation is of growing importance in the field of photovoltaics because of the continuous improvement of wafer quality. Modulated Photoluminescence (MPL) is a powerful tool that allows to measure the minority carrier lifetime [1] of semiconductors. An in-house PECVD reactor with in-situ MPL tool [2] is used to study the evolution of passivating properties during annealing. The measured MPL signal was post-treated in order to take into account two important features. The lifetime calculated from phase shift of the MPL signal is a differential lifetime, from which can be extracted the effective [3]. It also varies with temperature despite the absence of changes in passivation. This dependence is modelled by a power law [4], so that in the following graph, the equivalent lifetime at 300K is plotted, in order to narrow down observations to changes in passivation properties.