EU PVSEC Programme Online
EU PVSEC 2020, 7 - 11 September 2020
Presentation: 2BO.4.5 Benchmarking TCOs for Silicon Heterojunction Solar Cells
Type: Oral
Date: Tuesday, 8th September 2020
15:15 - 16:45
Author(s): A. Cruz Bournazou, D. Erfurt, E.-C. Wang, A.B. Morales-Vilches, B. Szyszka, R. Schlatmann, B. Stannowski
Presenter / Speaker: A. Cruz Bournazou, HZB, Berlin, Germany
Event: Conference Conference
Session: 2BO.4 Si-Alloy Based Functional Layers and TCOs
Type(s) of Access:  Conference Registration
Topic: 2. 3 Low Temperature Route for Si Cells
Summary / Abstract: Silicon heterojunction (SHJ) solar cells have gained significant relevance in the past years due to record efficiencies of 25.1% and 26.7% for 2-side contacted and all-back-contacted solar cells, respectively [1–3]. Since the lateral conductivity of the thin-film silicon layers applied on these devices as passivating and selective contacts is relatively low, a transparent conductive oxide (TCO) is needed to achieve sufficiently low resistive lateral carrier transport to the metal-grid fingers. Furthermore, the front TCO serves as an anti-reflective coating (ARC) in the device. A commonly used method to quantify the suitability of a TCO for SHJ solar cells application, is to extract the sheet resistance (R@) and optical absorption from TCO layers deposited on glass.