EU PVSEC Programme Online
EU PVSEC 2020, 7 - 11 September 2020
Presentation: 2BO.4.4 The Sputter Deposition of Low Resistive and Broadband Transparent Cerium and Hydrogen Co-Doped Indium Oxide and Its Transfer to Silicon Heterojunction Solar Cells
Type: Oral
Date: Tuesday, 8th September 2020
15:15 - 16:45
Author(s): L. Tutsch, T. Koida, H. Sai, M. Bivour, M. Hermle, T. Matsui
Presenter / Speaker: L. Tutsch, Fraunhofer ISE, Freiburg, Germany
Event: Conference Conference
Session: 2BO.4 Si-Alloy Based Functional Layers and TCOs
Type(s) of Access:  Conference Registration
Topic: 2. 3 Low Temperature Route for Si Cells
Summary / Abstract: Both in research labs as well as in SHJ production lines tin doped indium oxide ITO is the predominantly utilized material for lateral transport window layers in silicon heterojunction SHJ solar cells, owing to its stability, its decent electro-optical properties and the benefit in manufacturing costs since being applied in other PV and non-PV mass production technologies. However, indium oxide based materials with properties outperforming conventional ITO are discovered and extensively studied in the past years. Here the usage of other metal dopants (e.g. Zr, W, Ti, Mo, Ce [1–4]) than tin and/or the incorporation of hydrogen [5,6] resulted in enlarged electron mobility, being an important parameter for the conductivity – transparency trade-off. Applying highly conductive films also enables the reduction of the film´s thickness [7,8] and/or the increase of the spacing between the metal fingers, allowing a further improvement of the optical performance and a reduction of the material costs. In this work the electro-optical properties of In2O3:Ce,H thin-films after sputter-deposition and subsequent crystallization from the solid phase were studied dependent on their cerium, oxygen and hydrogen content. Further the influence of the annealing atmosphere (with or without oxygen) as well as the substrate type (planar glass or textured SHJ precursors) on the thin-film bulk properties was investigated. Eventually, optimized In2O3:Ce,H films were applied on SHJ devices to observe the potential of this material contrasted to an optimized ITO layer.