EU PVSEC Programme Online
EU PVSEC 2020, 7 - 11 September 2020
Presentation: 1BO.16.4 Formation of p-Type BaSi2 Thin Film and its Application to Silicon-Based Heterojunction Solar Cells
Type: Oral
Date: Tuesday, 8th September 2020
08:30 - 10:00
Author(s): Y. Kimura, M. Fujiwara, K. Takahashi, Y. Nakagawa, T. Yoshino, K. Gotoh, Y. Kurokawa, N. Usami
Presenter / Speaker: N. Usami, Nagoya University, Nagoya, Japan
Event: Conference Conference
Session: 1BO.16 Development and Characterization of New Solar Cell Architectures
Type(s) of Access:  Conference Registration
Topic: 1. 2 New Materials and Concepts for Cells and Modules
Summary / Abstract: We report on formation of p type barium disilicide ( BaSi 2 thin film on n type crystalline silicon by two different methods and its application to silicon based heterojunction solar cells. Semiconducting BaSi 2 has been known as a promising candidate for thin film solar cells owing to its suitable bandgap for single junction solar cells , large absorption coefficients (>10 4 cm 1 at 1.5 eV) and minority carrier diffusion length (>10 m), abundance of constituent elements in the earth’s crust , and so on [ Since undoped BaSi 2 generally exhibits n type condu ctivity due to the presence of Si vacancies to donate electrons, forma tion of p type BaSi 2 has been regarded as one of the keys to apply BaSi 2 to solar cells. This could be achieved by in situ doping of boron to substitute silicon sites in the case of molecular beam epitaxy (MBE), and the first operation of BaSi 2 homojunctio n solar cells using in situ doping h as been recently reported [