Researches on photovoltaic devices with high performance-to-cost ratio require the efforts not only on efficiency improvements, but also on manufacturing cost reduction, e.g. the adoption of thinner absorbers and simpler fabrication routes. Thin-film crystalline silicon (c-Si) heterojunction solar cells (HSCs) with dopant-free and carrierselective configurations look like ideal candidates in this respect. Here, dopant-free asymmetric n-Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (n- Si/PEDOT:PSS) HSCs were investigated on thin film c-Si (~ 25 μm) substrates. Periodic pyramid array with period of 1.4 μm was used as front-side surface texturing to improve the light utilization. In the front-side emitter, bi-layer PEDOT:PSS films with separately additives of (3-glycidoxypropyl)trimethoxysilane (GOPS) and 1-ethyl- 3-methylimidazolium tricyanomethanide (EMIM/TCM) were used as hole-transporting layers to ensure effectively carriers separation and transmission simultaneously. As to the rear-side, Self-doped TiOX film was used as electron-selective passivating layer, showing low surface recombination velocity of below 10 cm/s and low contact resistivity of below 20 mW/cm2. A final efficiency of 14.90% was realized by optimizing the interfacial recombination and series resistance at front/rear-side, showing a promising strategy to fabricate high-performance thin film crystalline silicon HSCs with simple and low temperature process.