EU PVSEC Programme Online
EU PVSEC 2019, 9 - 13 September 2019, Marseille
Presentation: 2AV.1.30 Defect Analysis of APCVD Gettered Multicrystalline Silicon
Type: Visual
Date: Monday, 24th September 2018
13:30 - 15:00
Location / Room: SQUARE - Brussels Meeting Centre Level -2 / Grand Hall
Author(s): M. Fleck, J. Lindroos, A. Zuschlag, G. Hahn
Presenter / Speaker: M. Fleck, University of Konstanz, Konstanz, Germany
Event: Conference Conference
Session: 2AV.1 Feedstock, Crystallisation, Wafering, Defect Engineering
Type(s) of Access:  Conference Registration
Topic: 2. 1 Feedstock, Crystallisation, Wafering, Defect Engineering
Keywords: Defects, Gettering, Lifetime, APCVD, Multicrystalline Silicon
Summary / Abstract: The effects of atmospheric pressure chemical vapor deposition (APCVD) gettering on material quality of industry standard mc-Si wafers has been studied on a microscopic level and compared to POCl3 gettered samples. The interaction of the gettering efficacy with the microscopic defect structure has been studied by a combination of measurements of the effective minority charge carrier lifetime (eff), interstitial iron (Fei), optical microscope images of defect structures revealed with Secco etching, a subsequent high resolution etch pit density (EPD) analysis as well as Electron Beam Induced Current (EBIC) and Electron Backscatter Diffraction (EBSD). Findings include a similar gettering quality of APCVD- and POCl3-based glasses and a reduction of EPD after the gettering step.