EU PVSEC Programme Online
EU PVSEC 2020, 7 - 11 September 2020
Presentation: 2AO.5.6 Influence of Emitter Layers on LeTID Kinetics in Multicrystalline Silicon
Type: Oral
Date: Monday, 24th September 2018
15:15 - 16:45
Location / Room: SQUARE - Brussels Meeting Centre Level 0 / Gold Hall
Author(s): A. Otaegi, D. Skorka, A. Schmid, A. Zuschlag, J.C. Jimeno, G. Hahn
Presenter / Speaker: A. Otaegi, UPV/EHU, Bilbao, Spain
Event: Conference Conference
Session: 2AO.5 Characterisation and Modelling of Materials and Surfaces for Silicon Photovoltaics
Type(s) of Access:  Conference Registration
Topic: 2. 5 Characterisation & Simulation Methods for Si Cells
Keywords: Multicrystalline Silicon, LeTID, Degradation, Regeneration, Emitter, Layers
Summary / Abstract: The influence of emitter layers on LeTID kinetics in multicrystalline silicon is analysed in this work. Multicrystalline silicon samples with emitter layers with sheet resistivity of 60, 175, 200, 230 and 360 Ω/sq have been processed and exposed afterwards to 1 sun illumination at 75ºC for more than 2000 h. The effective lifetime of the minority charge carriers of the samples has been measured repetitively by spatially resolved photoluminescence. The resulting lifetime maps are analysed and the effective defect concentration of the samples is calculated. This approach leads to different degradation rates, depending on the emitter sheet resistivity, and to the same defect regeneration rate, but differing in the onset of regeneration.