In this contribution, we report on low temperature deposition of conducting indium oxide (In2O3) films by a radio-frequency plasma enhanced reactive thermal evaporation technique. The films were deposited on glass and flexible polyethylene terephthalate substrates without intentional heating of the substrate and at temperatures up to 150 oC. The material stoichiometry was accurately controlled by adjusting the deposition conditions including oxygen flow, process pressure, pumping speed, and rf-power. The Hall effect measurements were performed on the fabricated samples to determine the relation between the deposition conditions and the electrical properties of the films. The resistivity of 4×10-4 Ω-cm was reached under optimized deposition conditions. Coatings on flexible plastic substrates with 16 Ω/sq sheet resistance show an 82% peak value of transmittance in the visible spectral range. The film morphology is also analyzed by scanning electron microscopy (SEM).