EU PVSEC Programme Online
EU PVSEC 2021, 6 - 10 September 2021
Presentation: 1DO.6.3 Approaching 4n2 Classical Limit in Metal-Free and Ultra-Thin Crystalline Silicon Solar Cells
Type: Oral
Date: Thursday, 3rd October 2013
17:00 - 18:30
Location / Room: Hall 3 / Auditorium 311
Author(s): A. Ingenito, O. Isabella, M. Zeman
Presenter / Speaker: A. Ingenito, Delft University of Technology, Delft, Netherlands
Event: Conference Conference
Session: 1DO.6 Advanced Light Trapping and Nanophotonics
Topic: 1. 2 New Materials and Concepts for Cells
Summary / Abstract: The need for cost reduction requires using less raw material and cost-effective processes without sacrificing the conversion efficiency. We propose a metal-free light trapping scheme for absorption enhancement in ultra-thin silicon wafers: black silicon and alkaline pyramidal textures for state-of-the-art light in-coupling at front side and efficient light scattering at back side, respectively, and dielectric Distributed Bragg Reflector for omni-directional rear reflectance. Measured absorptances of wafers with different thickness showed a spectral behavior up to 98% of 4n2 classical absorption limit (400 nm - 1200 nm). Our textured wafers were also electrically investigated by measuring effective carrier lifetime. We calculated the implied photo-generated current density and open-circuit voltage as function of wafer thickness, finding that (i) fabricated 80 μm thick wafer can potentially generate a conversion efficiency higher than 21% and (ii), by extrapolating the efficiency trend down to 10 μm, conversion efficiency peaks for thicknesses between 40 and 60 μm.