EU PVSEC Programme Online
EU PVSEC 2021, 6 - 10 September 2021
Presentation: 2BV.6.24 Progress in Laser Doped PERL Solar Cell on p-Type CZ Silicon Wafer
Type: Visual
Date: Tuesday, 25th September 2012
13:30 - 15:00
Location / Room: Poster Area 2 / Forum, Hall Areal
Author(s): G. Xu, B. Hallam, Z. Hameiri, C.M. Chong, S.R. Wenham
Presenter / Speaker: G. Xu, UNSW, Sydney, Australia et al.
Event: Conference Conference
Session: 2BV.6 Silicon Solar Cell Improvements
Type(s) of Access:  Conference Registration
Topic: 2. 2 Silicon Solar Cell Improvements
Keywords: c-Si, Laser Processing, Defects
Summary / Abstract: The world recorded 25% conversion efficiency for single junction silicon solar cell is achieved by passivated emitter and rear locally diffused solar cell using highly purified and expensive float zone silicon wafers.This paper reports initial results of transferring such a solar cell structure onto commercial grade silicon wafer via laser doping technology to overcome the performance limits enforced by the industry screen printing solar cell technology. As proof-of-concept, open circuit voltage in the range of 660mV was achieved on a commercial grade silicon wafer with high short circuit current density. However, at this stage, the solar cells’ efficiency is limited by low fill factor. Further investigation reveals that this low FF is probably caused by laser-induced defect. It was found a buffer layer which deposited to rear surface before laser doping increases the FF by 7% absolute and by more than 1% absolute increase in solar cell’s efficiency.